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Semiconductor Materials

Semiconductor Materials & Sputtering Target Solutions

Stanford Advanced Materials (SAM) is your advanced materials partner for the semiconductor industry. We supply ultra-high purity (99.99% to 99.99999%) compound semiconductor materials and mission-critical PVD sputtering targets engineered to meet the challenges of next-generation fabrication.

Our expertise helps you tackle key issues in thin film deposition—from enabling sub-3nm logic interconnects and ensuring step coverage in 3D NAND to optimizing the total cost of ownership (TCO) for your process.

Focused Solutions for Advanced Applications

Jump directly to the materials and insights for your specific challenge.

Interconnect Solutions for 3nm/2nm and Beyond

The Challenge: As device scaling continues, traditional barrier/liner materials for Cu interconnects face fundamental limits in resistivity and gap-fill capability within increasingly confined spaces.

Key Materials & Focus: Cobalt (Co) Targets for low-resistivity barriers and Ruthenium (Ru) Targets as an ideal liner for direct Cu plating. Performance hinges on ultra-high purity and precise grain structure control.

Deep Dive: Compare Co vs. Ru performance data, understand process integration for FinFET/GAA structures, and learn the 5 critical questions to ask your target supplier.

DRAM & 3D NAND Manufacturing

The Challenge: Optimizing the process window for DRAM capacitor electrodes and achieving conformal step coverage in the extreme aspect-ratio structures of 3D NAND.

Key Materials & Focus: Aluminum (Al) and Titanium Nitride (TiN) Targets for DRAM capacitors; Tantalum (Ta) and Tantalum Nitride (TaN) Targets for robust barrier layers in 3D NAND.

Deep Dive: Analyze material selection strategies, cost implications of increasing stack layers, and the balance between PVD and emerging techniques like ALD.

Optimizing Target Utilization & TCO

The Challenge: High cost of 300mm targets, productivity loss from low utilization rates, and unplanned downtime due to target failure.

The Solution: Advanced target design (rotary vs. planar, asymmetric) and superior bonding technology (brazing, soldering) to extend target life and improve thermal management.

Deep Dive: Learn how design and bonding innovations can boost utilization by 30% or more, and access a model to calculate the true ROI of your targets.

Featured Semiconductor Materials & Sputtering Targets

Our most critical materials for advanced semiconductor fabrication, available in ultra-high purity grades and customized forms including sputtering targets.

Interconnect & Barrier Layers

Cobalt (Co) Targets – Low-resistivity barrier for advanced node Cu interconnects
Ruthenium (Ru) Targets – Liner material for direct plating in 3nm/2nm nodes
Tantalum (Ta) & Tantalum Nitride (TaN) Targets – Barrier layers for logic and 3D NAND
Titanium (Ti) & Titanium Nitride (TiN) Targets – Adhesion layers, electrodes, and hard masks
Copper (Cu) Targets – Primary interconnect material

Transparent Conductive Oxides (TCOs)

Indium Tin Oxide (ITO) Targets – Industry-standard transparent conductive oxide
Aluminum-doped Zinc Oxide (AZO) Targets – ITO alternative with cost advantages
Fluorine-doped Tin Oxide (FTO) Targets – For photovoltaic and display applications

Compound Semiconductors for Optoelectronics & Power

Gallium Arsenide (GaAs) & Related Alloys – High-frequency, RF, and optoelectronic devices
Gallium Nitride (GaN) Related Materials – Power electronics and LEDs
Indium Phosphide (InP) & Related Alloys – Photonic integrated circuits and high-speed electronics
Silicon Carbide (SiC) Related Materials – Wide-bandgap power devices

Specialty Materials

Aluminum (Al) Targets – DRAM capacitor electrodes, bonding pads
Tungsten (W) Targets – Word lines, contacts, and high-temperature applications
Molybdenum (Mo) Targets – Gate electrodes and barrier applications
Cadmium Telluride (CdTe) Targets – Thin-film photovoltaics
CIGS (Copper Indium Gallium Selenide) Targets – High-efficiency solar absorbers