Chemical Formula: SiC
Catalog Number: ST0227
CAS Number: 409-21-2
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made
The silicon carbide sputtering target is available in various forms, purities, sizes, and prices. Stanford Advanced Materials (SAM) offers high-quality silicon carbide sputter targets at the most competitive prices.
Silicon Carbide sputtering target from Stanford Advanced Materials is a carbide ceramic sputtering material with the formula SiC.
Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.
Related Product: P-Type Silicon Sputtering Target
Carbon is a chemical element that originated from the Latin ‘carbo’, meaning charcoal. It was early used in 3750 BC and discovered by Egyptians and Sumerians. “C” is the canonical chemical symbol of carbon. Its atomic number in the periodic table of elements is 6 with a location at Period 2 and Group 14, belonging to the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, the number in the brackets indicating the uncertainty.
Related Product: Carbide Ceramic Sputtering Target
| Material Type | Silicon Carbide |
| Symbol | SiC |
| Melting Point (°C) | ~2,700 |
| Theoretical Density (g/cc) | 3.22 |
| Sputter | RF |
| Type of Bond | Indium, Elastomer |
| Comments | Sputtering preferred. |
Indium Bonding and Elastomeric Target Bonding Service are available for Silicon Carbide (SiC) Sputtering Target. Stanford Advanced Materials is devoted to machining standard backing plates and working together with the Taiwan Bonding Company for providing bonding services. For questions about target bonding materials, methods and services, please click here.
Our Silicon Carbide Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
SAM specializes in producing high purity Silicon Carbide Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Please send us an inquiry for the current prices of the sputtering targets and other deposition materials that are not listed.
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These are exactly as described. I got them for sputter coating experiment and they're ideal for that purpose.
