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(949) 407-8904 Mon - Fri 09:00 - 18:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 09:00 - 18:00 23661 Birtcher Dr., Lake Forest, California, USA

Silicon Carbide (SiC) Sputtering Target

Chemical Formula: SiC
Catalog Number: ST0227
CAS Number: 409-21-2
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made




Description

Target Bonding of Silicon Carbide (SiC) Sputtering Target

Indium Bonding and Elastomeric Target Bonding Service are available for Silicon Carbide (SiC) Sputtering Target. Stanford Advanced Materials is devoted to machining standard backing plates and working together with the Taiwan Bonding Company for providing bonding services. For questions about target bonding materials, methods and services, please click here.

target bonding

Specification

Material Type Silicon Carbide
Symbol SiC
Melting Point (°C) ~2,700
Theoretical Density (g/cc) 3.22
Sputter RF
Type of Bond Indium, Elastomer
Comments Sputtering preferred.

Chemical Elements

Silicon

SiliconSilicon is a chemical element originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.

Carbon

CarbonCarbon is a chemical element originated from the Latin ‘carbo’, meaning charcoal. It was early used in 3750 BC and discovered by Egyptians and Sumerians. “C” is the canonical chemical symbol of carbon. Its atomic number in the periodic table of elements is 6 with location at Period 2 and Group 14, belonging to the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, the number in the brackets indicating the uncertainty.

 

Packaging

Our Silicon Carbide (SiC) Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.

Get Contact

SAM specializes in producing high purity Silicon Carbide (SiC) Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.

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Silicon Carbide (SiC) Sputtering Target
Average rating:  
 1 reviews
by Barbara Halliday on Silicon Carbide (SiC) Sputtering Target

These are exactly as described. I got them for sputter coating experiment and they're ideal for that purpose.