|Chemical Formula||In2O3/ WO3|
|Purity||99.9%, 99.95%, 99.99%, 99.995%, 99.999%|
|Shape||Discs, Plates, Column Targets, Step Targets, Custom-made|
The Tungsten Doped Indium Oxide Sputtering Target is available in various forms, purities, sizes, and prices. Stanford Advanced Materials (SAM) offers high-quality Tungsten Doped Indium Oxide Sputtering Target at the most competitive prices.
Tungsten Doped Indium Oxide Sputtering Target refers to a type of target material used in sputtering processes. Sputtering is a physical vapor deposition technique commonly used in the semiconductor industry to deposit thin films of materials onto a substrate.
The addition of tungsten (W) in the indium oxide matrix improves the electrical and optical properties of ITO thin films, such as increased conductivity and enhanced light transmission. Tungsten doping also helps to improve the stability and durability of ITO coatings.
Related Product: ITO Sputtering Target
|Compound Formula||In2O3/ WO3|
|Available Sizes||Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″
Tungsten Doped Indium Oxide Sputtering Target is typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.
Our Tungsten Doped Indium Oxide Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.
SAM’s Tungsten Doped Indium Oxide Sputtering Targets are available in various forms, purities, and sizes. We specialize in producing high purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.
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