| Catalog No. | GA2171 |
|---|---|
| Material | GaAs |
| Thickness | 350 um ~ 625 um |
| Conductive Type | P – type / N – type / Semi-insulating |
| Diameter | Ø 2″ / Ø 3″ / Ø 4″ |
| Polytype | 4H / 6H |
Stanford Advanced Materials (SAM) offer single crystal GaAs gallium arsenide wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.
Gallium Arsenide (GaAs) crystal has good chemical stability, hardness and is resistant to harsh environments. GaAs can be supplied as ingots and polished wafers, both conducting and semi-insulating GaAs gallium arsenide wafer. Mechanical grade and epi ready grade are all available.
|
Growth |
LEC / VGF |
|
Diameter |
Ø 2″ / Ø 3″ / Ø 4″ |
|
Thickness |
350 um ~ 625 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P – type / N – type / Semi-insulating |
|
Dopant |
Zn / Si / undoped |
|
Surface |
One side polished or two sides polished |
|
Concentration |
1E17 ~ 5E19 cm-3 |
|
TTV |
<= 10 um |
|
Bow / Warp |
<= 20 um |
|
Grade |
Epi polished grade / mechanical grade |
Gallium arsenide wafer has the following applications:
– Light-emitting diodes
– Laser diodes
– Photovoltaic devices
– High Electron Mobility Transistor
– Heterojunction Bipolar Transistor
Related Article:
Gallium Arsenide Wafer VS. Silicon Wafer
What Are the Benefits of Gallium Phosphide Wafers?
Gallium Arsenide Wafer Used for Electronic Devices Manufacturing
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