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CY2299 LSAT Crystal Substrates

Catalog No. CY2299
Size 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Material (La, Sr) (Al, Ta) O3
Appearance Colorless, light brown

Stanford Advanced Materials (SAM) offers LAST Crystal Substrates and provides customers the widest choice of LAST material with high uniformity of electrical properties and excellent surface quality.




Description

LSAT Crystal Substrates Description

Compared with the more commonly used high-temperature superconducting thin-film LaAlO3 crystal, (La, Sr) (Al, Ta) O3, also referred to as LSAT crystal substrates, has the same crystal structure, and the phase transition temperature is low, and twins are not easy to appear, this excellent high temperature superconducting thin film substrates are gradually recognized. At the same time, its <111> direction has the same hexagonal symmetry as GaN, so it can be used as a substrate material for GaN and AlN films.

LSAT Crystal Substrates Specification

Major Capability Parameter
Crystal Structure Cubic
Lattice Constant a=3.868 A
Melt Point(°C) 1840
Density 6.74(g/cm3)
Hardness 6.5(mohs)
Dielectric Constant 22
Thermal Expansion Coefficient 10 x 10-6 /K
Appearance Colorless, light brown
Size
10×3, 10×5, 10×10, 15×15, 20×15, 20×20
Ф2″
Thickness 0.5mm, 1.0mm
Polishing Single or double side polished
Crystal Orientation <100>, <110>, <111>±0.5º
Orientation Accuracy ±0.5°
Edge Orientation Accuracy: 2° (special in 1°)
Ra ≤5Å (5µm×5µm)

LSAT Crystal Substrates Application

Due to the same hexagonal symmetry as GaN, LSAT Crystal Substrates can be used as a substrate material for GaN and AlN films.

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LSAT Crystal Substrates
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