| Catalog No. | CY2299 |
|---|---|
| Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm |
| Material | (La, Sr) (Al, Ta) O3 |
| Appearance | Colorless, light brown |
Stanford Advanced Materials (SAM) offers LAST Crystal Substrates and provides customers the widest choice of LAST material with high uniformity of electrical properties and excellent surface quality.
Compared with the more commonly used high-temperature superconducting thin-film LaAlO3 crystal, (La, Sr) (Al, Ta) O3, also referred to as LSAT crystal substrates, has the same crystal structure, and the phase transition temperature is low, and twins are not easy to appear, this excellent high temperature superconducting thin film substrates are gradually recognized. At the same time, its <111> direction has the same hexagonal symmetry as GaN, so it can be used as a substrate material for GaN and AlN films.
| Major Capability Parameter | |
| Crystal Structure | Cubic |
| Lattice Constant | a=3.868 A |
| Melt Point(°C) | 1840 |
| Density | 6.74（g/cm3） |
| Hardness | 6.5（mohs） |
| Dielectric Constant | 22 |
| Thermal Expansion Coefficient | 10 x 10-6 /K |
| Appearance | Colorless, light brown |
|
Size
|
10×3, 10×5, 10×10, 15×15, 20×15, 20×20 |
| Ф2″ | |
| Thickness | 0.5mm, 1.0mm |
| Polishing | Single or double side polished |
| Crystal Orientation | <100>, <110>, <111>±0.5º |
| Orientation Accuracy | ±0.5° |
| Edge Orientation Accuracy: | 2° (special in 1°) |
| Ra | ≤5Å (5µm×5µm) |
Due to the same hexagonal symmetry as GaN, LSAT Crystal Substrates can be used as a substrate material for GaN and AlN films.
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