| Catalog No. | CY2461 |
|---|---|
| Size | 10mm x 10mm x 0.5 mm |
| Material | ZnTe |
| Orientation | (110) +/- 1o |
| Growth Method | Vertical bridgman method |
Supplying a variety size of Zinc telluride crystal substrate. Stanford Advanced Materials (SAM) has a professional sales team to offer a fast response within 24 hours and warm service.
Zinc Telluride Crystal Substrate Safety Data Sheet
Zinc Telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct bandgap of 2.26 eV. It is usually a p-type semiconductor. Its Zinc telluride crystal substrate structure is cubic, like that for sphalerite and diamond.
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ZnTe single-crystal substrate |
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Structure formula: |
ZnTe |
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Lattice paramters, A |
a = 6.1034 |
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Specific resistivity, Ohm cm |
1×106 |
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Thermal expansivity |
10.3ppm/°C |
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EPD, cm-1 |
< 5×105 |
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Density of low angle boundaries, cm-1 |
< 10 |
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Tolerances |
+ 0.000 mm / -0.100 mm |
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Polished |
One side or double side polished |
Zinc telluride crystal substrate can be used for solar cells, for example, as a back-surface field layer and p-type semiconductor material for a CdTe/ZnTe structure or in PIN diode structures.
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