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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

CY2426 Silicon Carbide Crystal Substrates

Catalog No. CY2426
Size 10x10x0.33 mm or customed
Surface Polished, One sides epi polished on Si face
Orientation <0001> +/-0.5
Growth Method MOCVD

A variety size of SiC silicon carbide crystal substrates can be offered by Stanford Advanced Materials (SAM). We have a professional sales team to offer a fast response within 24 hours and warm service.




Description

Silicon Carbide Crystal Substrates Description

SiC silicon carbide crystal substrate has many different crystal structures, which are called polytypes. The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.

Silicon Carbide Crystal Substrates Specifications

SiC crystal substrate

Formula weight

 40.10

Lattice constant

a =3.07 A       c = 10.05 A

Stacking sequence

ABCB

Growth Technique

MOCVD

Polishing

Silicon face polished

Band Gap

3.26 eV ( Indirect)

Resistivity

0.01~0.5 ohm-cm

Hardness

 9 Mohs

Doping level of nitrogen atoms

 10^18-19 cm^-3

Surface Roughness

< 10 A by AFM

Silicon Carbide Crystal Substrates Applications

Silicon carbide crystal substrates have been used for III-V Nitride Deposition; Optoelectronic Devices; High Power Devices; High-Temperature Devices; High-Frequency Power Device

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Silicon Carbide Crystal Substrates
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