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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

CY2536 Silicon-Germanium (Si-Ge) Single Crystal Substrates

Catalog No. CY2536
Size 4″ diameter x 0.5 mm
Material Si-Ge(2 wt% Ge)
Orientation <100> ±0.5°
Growth Method Crystallization process

Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used thanks to its excellent properties. Stanford Advanced Materials (SAM) has over two decades’ experience in the manufacture and sale of the Silicon-Germanium (Si-Ge) Single Crystal Substrates.




Description

Silicon-Germanium (Si-Ge) Single Crystal Substrates Description

Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used in the industry thanks to its excellent physical and chemical properties. Stanford Advanced Materials (SAM) has rich experience in the manufacture of the Silicon-Germanium (Si-Ge) Single Crystal Substrates and provides customers with high-quality Silicon-Germanium (Si-Ge) Single Crystal Substrates at a very competitive price.

Silicon-Germanium (Si-Ge) Single Crystal Substrates Specifications

Conductivity

P type

Resistivity

7-8  ohm-cm

Polish

 Two sides polished

Surface roughness

 < 5A

Packing

Independent vacuum packaging for each piece

Silicon-Germanium (Si-Ge) Single Crystal Substrates Applications

Silicon-Germanium (Si-Ge) Single Crystal Substrates can be used in the field of semiconductor material and silicon-based photonic devices.

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Silicon-Germanium (Si-Ge) Single Crystal Substrates
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