| Catalog No. | CY2536 |
|---|---|
| Size | 4″ diameter x 0.5 mm |
| Material | Si-Ge（2 wt% Ge） |
| Orientation | <100> ±0.5° |
| Growth Method | Crystallization process |
Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used thanks to its excellent properties. Stanford Advanced Materials (SAM) has over two decades’ experience in the manufacture and sale of the Silicon-Germanium (Si-Ge) Single Crystal Substrates.
Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used in the industry thanks to its excellent physical and chemical properties. Stanford Advanced Materials (SAM) has rich experience in the manufacture of the Silicon-Germanium (Si-Ge) Single Crystal Substrates and provides customers with high-quality Silicon-Germanium (Si-Ge) Single Crystal Substrates at a very competitive price.
|
Conductivity |
P type |
|
Resistivity |
7-8 ohm-cm |
|
Polish |
Two sides polished |
|
Surface roughness |
< 5A |
|
Packing |
Independent vacuum packaging for each piece |
Silicon-Germanium (Si-Ge) Single Crystal Substrates can be used in the field of semiconductor material and silicon-based photonic devices.
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