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(949) 407-8904 Mon - Fri 09:00 - 18:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 09:00 - 18:00 23661 Birtcher Dr., Lake Forest, California, USA

Bismuth (Bi) Sputtering Target

Chemical Formula:Bi
Catalog Number:ST004
CAS Number:7440-69-9
Purity:>99.9%
Shape:Discs, Plates, Column Targets, Step Targets, Custom-made




Description

Target Bonding of Bismuth (Bi) Sputtering Target

Indium Bonding and Elastomer Bonding are  recommended for Bismuth (Bi) Sputtering Target. Stanford Advanced Materials is devoted to machining standard backing plates and working together with the Taiwan Bonding Company for providing bonding services. For questions about target bonding materials, methods and services, please click here.

target bonding

Specification of Bismuth (Bi) Sputtering Target

Atomic Weight 208.9804
Atomic Number 83
Color/Appearance Lustrous Reddish White, Metallic
Thermal Conductivity 8 W/m.K
Melting Point (°C) 271
Coefficient of Thermal Expansion 13.4 x 10-6/K
Theoretical Density (g/cc) 9.8
Z Ratio 0.79
Sputter DC
Max Power Density*(Watts/Square Inch) 10
Type of Bond Indium, Elastomer
Export Control (ECCN) 1C229
Comments Resistivity high. Low Melting Point materials not ideal for sputtering.

Bismuth Description

BismuthBismuth is a chemical element originated from the German ‘Bisemutum’ a corruption of ‘Weisse Masse’ meaning white mass. It was early used in 1753 and discovered by C.F. Geoffroy. “Bi” is the canonical chemical symbol of bismuth. Its atomic number in the periodic table of elements is 83 with location at Period 6 and Group 15, belonging to the p-block. The relative atomic mass of bismuth is 208.98040(1) Dalton, the number in the brackets indicating the uncertainty.

Packaging

Our Bismuth (Bi) Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.

Get Contact

SAM specializes in producing high purity Bismuth (Bi) Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.