Shape:Discs, Plates, Column Targets, Step Targets, Custom-made
Indium Bonding and Elastomer Bonding are recommended for Bismuth (Bi) Sputtering Target. Stanford Advanced Materials is devoted to machining standard backing plates and working together with the Taiwan Bonding Company for providing bonding services. For questions about target bonding materials, methods and services, please click here.
|Color/Appearance||Lustrous Reddish White, Metallic|
|Thermal Conductivity||8 W/m.K|
|Melting Point (°C)||271|
|Coefficient of Thermal Expansion||13.4 x 10-6/K|
|Theoretical Density (g/cc)||9.8|
|Max Power Density*(Watts/Square Inch)||10|
|Type of Bond||Indium, Elastomer|
|Export Control (ECCN)||1C229|
|Comments||Resistivity high. Low Melting Point materials not ideal for sputtering.|
Bismuth is a chemical element originated from the German ‘Bisemutum’ a corruption of ‘Weisse Masse’ meaning white mass. It was early used in 1753 and discovered by C.F. Geoffroy. “Bi” is the canonical chemical symbol of bismuth. Its atomic number in the periodic table of elements is 83 with location at Period 6 and Group 15, belonging to the p-block. The relative atomic mass of bismuth is 208.98040(1) Dalton, the number in the brackets indicating the uncertainty.
Our Bismuth (Bi) Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
SAM specializes in producing high purity Bismuth (Bi) Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.