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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ZN2277 Zinc Oxide Wafer Substrate

Catalog No. ZN2277
Material ZnO
Crystal Structure Hexagonal
Refractive Index 2.0681/2.0510

Stanford Advanced Materials (SAM) provides Zinc Oxide Wafer Substrate with size 10 x 10 x 0.5 mm. We always choose prime grade and defect-free wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.




Description

Zinc Oxide Wafer Substrate Description

With an ideal crystal structure, the zinc oxide wafer substrate has a 2% lattice mismatch to GaN, which is much less than the lattice mismatch of the sapphire wafer and SiC wafer. ZnO wafer substrate is one of the most suitable substrates for using as GaN epitaxial growth and wide bandgap semiconductor application. ZnO wafer substrate is supplied in a square shape, undoped, size 10 x 10 x 0.5 mm, double sides polished surface finish and <0001> oriented, our high-quality ZnO wafer substrate has been widely used for the growth of nitride-based devices.

Zinc Oxide Wafer Substrate Specification

Chemical formula

ZnO

Crystal structure

Hexagonal

Lattice constant

3.3 A

Lattice mismatch with GaN in <0001> plane

9

Thermal conductivity

0.006 cal / cm /K

Refractive index

2.0681 / 2.0510

Identified polished face

Zn-face/O-face

Zinc Oxide Wafer Substrate Application

Zinc oxide wafer substrates have the following applications:

– Semiconductor circuit substrate
– ZnO LED
– ZnO film

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