Chemical Formula: Ga2Te3
Catalog Number: ST0321
CAS Number: 12024-27-0
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made
Gallium telluride sputtering target is available in various forms, purities, sizes, and prices. Stanford Advanced Materials (SAM) is a trusted sputtering target supplier working with international partners to bring you the highest quality products with the most affordable pricing.
Gallium Telluride Sputtering Target Safety Data Sheet
Gallium (III) telluride sputtering target is a type of boride ceramic sputtering target composed of gallium and tellurium.
Gallium is a chemical element originated from France (with the Latin name Gallia). It was first mentioned in 1875 and observed by P. E. L. de Boisbaudran. The isolation was later accomplished and announced by P. E. L. de Boisbaudran. “Ga” is the canonical chemical symbol of gallium. Its atomic number in the periodic table of elements is 31 with location at Period 4 and Group 13, belonging to the p-block. The relative atomic mass of gallium is 69.723(1) Dalton, the number in the brackets indicating the uncertainty.
Related Product: Gallium Sputtering Target
Tellurium is a chemical element originated from Earth, the third planet on solar system (with the Latin word tellus). It was first mentioned in 1782 and observed by F.-J.M. von Reichenstein. The isolation was later accomplished and announced by H. Klaproth. “Te” is the canonical chemical symbol of tellurium. Its atomic number in the periodic table of elements is 52 with location at Period 5 and Group 16, belonging to the p-block. The relative atomic mass of tellurium is 127.60(3) Dalton, the number in the brackets indicating the uncertainty.
Related Product: Telluride Ceramic Sputtering Target
| Compound Formula | Ga2Te3 |
| Molecular Weight | 522.3 |
| Appearance | Solid |
| Melting Point | 790° C |
| Boiling Point | N/A |
| Density | 5.57 g/cm3 |
| Available Sizes | Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″ Thick: 0.125″, 0.250″ |
1. Indium bonding is recommended for gallium (III) telluride sputtering target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity, and is susceptible to thermal shock.
Our gallium (III) telluride sputtering targets are clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
SAM’s gallium (III) telluride sputtering targets are available in various forms, purities, and sizes. We specialize in producing high purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.
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