ST11217 Titanium Silicide (TiSi2) Planar Sputtering Target

Complete Technical Specifications & Capabilities

Comprehensive specifications for semiconductor process integration and advanced contact engineering.

Technical & Application Deep Dive

1. The Semiconductor Standard: TiSi₂ in Salicide Technology

Titanium Silicide has been the workhorse material for contact formation in semiconductor manufacturing for decades:

• Self-Aligned Silicide (Salicide) Process: TiSi₂ is deposited via sputtering, then patterned and annealed to form low-resistance contacts directly on exposed silicon areas (source, drain, gate) while remaining insulated elsewhere by oxide spacers. This self-aligned nature is critical for shrinking device geometries.
• Phase Transformation Control: The process involves transformation from high-resistivity C49 phase to low-resistivity C54 phase. Our targets are engineered to promote this transformation, and proper Rapid Thermal Processing (RTP) completes it in the deposited film.
• Linewidth Dependence: A key challenge is maintaining C54 phase formation at narrow linewidths (<0.25 µm). Advanced deposition and annealing techniques using our high-purity targets help overcome this limitation.

2. Material Advantages and Integration Considerations

TiSi₂ offers specific benefits for semiconductor integration:

• Lowest Resistivity Among Silicides: At ~13-20 µΩ·cm, C54-TiSi₂ provides the lowest sheet resistance, minimizing RC delay in interconnects.
• Excellent Silicon Compatibility: Forms stable interfaces with silicon substrates with minimal junction leakage when properly processed.
• Selective Etching Capability: Unreacted Ti over dielectric areas can be selectively removed, simplifying the salicide process flow.
• Thermal Stability: Stable up to ~900°C, compatible with backend thermal budgets.

3. Beyond CMOS: Emerging and Niche Applications

While largely succeeded by CoSi₂ and NiSi at the most advanced nodes, TiSi₂ remains important for:

• Mature Technology Nodes: Still widely used in 0.35µm to 0.13µm technology nodes for cost-effective manufacturing.
• Power Devices and MEMS: Excellent choice for power MOSFETs and MEMS devices where low contact resistance and process simplicity are valued.
• Research and Development: Used in studies of silicide formation kinetics, phase transformation mechanisms, and as a reference material for new contact schemes.
• Optoelectronics: As a conductive, stable electrode material for certain display and sensor applications.

Quality Assurance & Manufacturing

Stanford Advanced Materials ensures target quality through stringent controls:

• Phase Purity Verification: X-ray Diffraction (XRD) analysis confirms the dominant presence of the C54 phase and monitors for unwanted phases (C49, Ti-rich phases, or free Si).
• Compositional Accuracy: Inductively Coupled Plasma (ICP) and combustion analysis precisely determine Ti:Si ratio and impurity levels.
• Microstructural Homogeneity: Scanning Electron Microscopy (SEM) with EDS mapping verifies uniform elemental distribution and absence of porosity or inclusions.
• Density Measurement: High density (>95% theoretical) is confirmed to ensure stable sputtering behavior and consistent film properties.

Why Choose SAM for Your Titanium Silicide Targets?

• Decades of Semiconductor Materials Experience: Deep understanding of silicide requirements for contact and gate applications.
• Precision Phase Engineering: Specialized manufacturing to optimize for the critical C54 low-resistivity phase formation.
• Process Integration Support: Targets designed for compatibility with standard salicide process flows and annealing conditions.
• Flexible Solutions: Support for both high-volume production of mature technologies and specialized R&D requirements.

Next Steps: Get a Custom Quote

To receive a formal quotation or technical consultation, please provide:

1. Target application (e.g., salicide contacts, gate electrodes, research on phase formation).
2. Required dimensions (Thickness x Width x Length or Diameter x Thickness).
3. Specific phase requirements or resistivity targets for deposited films.
4. Any special bonding or packaging needs.