ST11216 Tantalum Silicide Planar Target, TaSi2 Target

Complete Technical Specifications & Capabilities

Detailed specifications tailored for semiconductor process integration and advanced metallization research.

Technical & Application Deep Dive

1. The Semiconductor Workhorse: TaSi₂ in Device Metallization

Tantalum Disilicide has been a cornerstone material in semiconductor technology due to its unique combination of properties:

• Gate Electrode Material: TaSi₂ films serve as robust gate electrodes in MOS transistors, offering lower resistivity than doped polysilicon alone and compatibility with the self-aligned silicide (salicide) process to reduce contact resistance.
• Local Interconnects & Contacts: Used for local wiring and contact plugs, TaSi₂ provides a stable, conductive path that withstands backend processing temperatures while preventing junction spiking and interdiffusion.
• Diffusion Barrier: Acts as an effective barrier between silicon substrates and aluminum or copper metallization, preventing detrimental reactions and dopant diffusion that could degrade device performance.

2. Material Science: Phase Control and Process Integration

The performance of TaSi₂ films critically depends on achieving the correct crystalline phase:

• Phase Formation: The low-resistivity hexagonal C40 phase is desired. Our targets are processed to favor this phase, and proper post-deposition annealing ensures its formation in the film, minimizing high-resistivity amorphous or other silicide phases.
• Composition Control: Precise Ta:Si ratio (near 1:2) in the target is essential for reproducible film stoichiometry, which directly affects resistivity, thermal stability, and etching characteristics.
• Interface Engineering: TaSi₂ forms well-defined interfaces with both silicon and silicon dioxide, enabling reliable device integration and stable electrical characteristics.

3. Sputtering Process for Silicide Targets

DC magnetron sputtering from conductive TaSi₂ targets is the standard deposition method:

• Conductive Target: TaSi₂ is a good electrical conductor, enabling efficient DC sputtering with high deposition rates and good process control.
• Film Uniformity: The planar target design, combined with optimized magnetron configuration, allows for highly uniform film deposition across large wafer diameters, critical for semiconductor manufacturing.
• Co-Sputtering Flexibility: TaSi₂ targets can be used in multi-target systems for co-sputtering with other materials (e.g., Ta, Si) to fine-tune film composition or gradient structures.

Quality Assurance & Manufacturing

Stanford Advanced Materials implements rigorous controls to ensure target performance:

• Phase Purity Verification: X-ray Diffraction (XRD) is used to confirm the dominant presence of the desired hexagonal TaSi₂ phase and detect any secondary phases (e.g., Ta₅Si₃, unreacted Ta).
• Compositional Accuracy: Chemical composition is verified using techniques like Inductively Coupled Plasma (ICP) analysis to ensure the correct Ta:Si ratio.
• Microstructural Homogeneity: Scanning Electron Microscopy (SEM) with EDS mapping confirms uniform distribution of Ta and Si, ensuring consistent sputtering erosion and film properties.
• Density Measurement: Archimedes’ method is used to confirm high density, minimizing porosity for stable sputtering performance.

Why Choose SAM for Your Tantalum Silicide Targets?

• Semiconductor-Grade Expertise: We understand the critical phase and stoichiometry requirements for semiconductor metallization applications.
• Precision in Intermetallic Compounds: Specialized manufacturing processes ensure high phase purity and compositional accuracy in TaSi₂ targets.
• Proven Integration Support: Our targets are designed to integrate seamlessly with standard PVD tools and salicide process flows.
• Customization for R&D and Production: We support both high-volume production needs and specialized R&D projects requiring tailored compositions or dimensions.

Next Steps: Get a Custom Quote

To receive a formal quotation or technical consultation, please provide:

1. Specific application (e.g., gate electrode, local interconnect, diffusion barrier).
2. Target dimensions (Thickness x Width x Length or Diameter x Thickness).
3. Required crystal phase emphasis or any specific resistivity targets.
4. Bonding and packaging preferences.