(949) 407-8904 Mon - Fri 08:00 - 17:00 1940 East Deere Avenue, Suite 100, Santa Ana, CA 92705, USA

ST11194 High-Purity Manganese (Mn) Rotary Sputtering Target

Our Manganese Rotary Sputtering Targets are engineered for high-volume deposition of pure manganese films, a material of growing importance in advanced semiconductor interconnects and specialized alloy coatings. Manganese serves as a critical alloying element and a precursor for self-forming diffusion barriers, enabling next-generation device scaling and performance.

Material Manganese (Mn)
Purity ≥ 99.9% (3N) Standard
Key Function Alloying Element & Barrier Precursor
Form Rotary Sputtering Target (Tubular)

Key Advantage: High purity and uniform density ensure stable sputtering of manganese for precise doping of alloys or formation of ultra-thin Mn-based barrier layers at copper/dielectric interfaces.
Customization: Purity (99.9%, 99.95%), tube dimensions (OD, ID, Length), and bonding fully customizable.
Typical Applications: Copper-Manganese (CuMn) alloy seed layers for self-forming barriers, additive for magnetic alloys (e.g., MnBi), corrosion-resistant coating component, and battery material research.

SKU: ST11194 Categories: , Tag:



Description

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11194).

Parameter Specification / Typical Value
Material Manganese (Mn)
Purity (Standard) ≥ 99.9%
Available Purity 99.9%, 99.95%
Density ≥ 7.21 g/cm³
Crystal Structure Complex cubic (α-Mn at RT)
Melting Point 1246 °C
Electrical Resistivity ~144 µΩ·cm (20°C)
Standard Shape Tubular (Rotary Target)
Key Dimensions Custom OD, ID, Length
Sputtering Method DC Magnetron (Optimized)
Bonding/Integration Compatible with standard rotary cathode systems
Certification Certificate of Analysis (CoA) provided

Technical & Application Notes

1. Enabling Sub-Nanometer Scaling in Semiconductors
Manganese’s primary high-tech application is in advanced semiconductor interconnects. When co-sputtered with copper to form a Cu(Mn) alloy seed layer, manganese diffuses during annealing to the Cu/dielectric interface. There, it reacts with oxygen in SiO₂ or low-κ materials to form a self-aligned, ultra-thin MnSiOₓ or MnOₓ barrier (~1-2 nm). This “self-forming barrier” technology is critical for reducing via resistance and enabling continued scaling beyond the 10nm node, replacing traditional TaN/Ta liners that consume valuable conductive volume.

2. A Versatile Alloying Agent
Beyond semiconductors, manganese is a key additive in functional thin films:

  • Magnetic Alloys: Used in films for spintronics or rare-earth-free magnets (e.g., MnBi, MnAl).

  • Corrosion-Resistant Coatings: Added to aluminum or magnesium alloys to improve corrosion performance.

  • Battery Materials: Investigated as a component in thin-film cathodes or anodes for Li-ion and beyond-Li batteries.

3. Why Rotary Design for Manganese Deposition?
For semiconductor manufacturing on 300mm wafers or large-area research, uniformity is non-negotiable.

  • Uniform Alloy Composition: Ensures consistent Mn concentration across the entire wafer for reliable barrier formation.

  • High-Throughput Compatibility: Meets the production demands of modern fabs.

  • Material Efficiency: Maximizes utilization of the target material.

4. Handling and Process Considerations
Manganese is reactive and prone to oxidation. Our targets are handled and packaged in controlled environments to minimize surface oxide formation. Sputtering typically requires a well-controlled argon atmosphere and may benefit from initial pre-sputtering to clean the target surface.


Quality Assurance

We control metallic impurities through careful sourcing and melting processes. Composition is verified via Inductively Coupled Plasma (ICP) analysis. Oxygen and nitrogen content are closely monitored, as these interstitials can affect sputtering stability and film properties. Density and dimensional checks ensure the target meets mechanical specifications for reliable rotary operation.


Why Stanford Advanced Materials (SAM)

  • Semiconductor Materials Specialist: We understand the precise role of Mn in self-forming barrier technology and supply to leading-edge logic and memory research.

  • Expertise in Reactive Metals: We handle and process manganese with protocols designed to maintain purity and minimize oxidation.

  • Engineered for Production: Our rotary targets are built for stability and longevity in high-power deposition environments.


Request More Information

Get a Formal Quote or Technical Datasheet
To discuss your manganese film application, please provide:

  1. Required purity and approximate Mn thickness/usage.

  2. Rotary target dimensions or your cathode model.

  3. Primary application (e.g., CuMn seed layer for interconnects, alloy research, corrosion coating).