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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

IN2270 Indium Antimonide Wafer

Catalog No. IN2270
Material InSb
Thickness 500 um
Conductive Type N – type
Diameter Ø 2″ Ø 3″

Stanford Advanced Materials (SAM) provides a wide range of compound wafers including Indium Antimonide Wafer, Gallium Arsenide Wafer, Gallium Phosphide Wafer and Gallium Antimony Wafer.




Description

Indium Antimonide Wafer Description

Indium antimonide wafer is made of a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

Indium Antimonide Wafer Specification

Growth

LEC

Diameter

Ø 2″ / Ø 3″

Thickness

500 um – 625 um

Orientation

(100)+/- 0.5°

Off orientation

Off 2° to 10°

Surface

One side polished or two sides polished

Flat options

EJ or SEMI. Std .

Mobility

(5.0-3.5)E5 cm2/Vs

EPD

<= 200 cm-2

Grade

Epi polished grade / mechanical grade

Package

Single wafer container

Indium Antimonide Wafer Application

Indium antimonide wafer has the following applications:

– Solar photovoltaic
– Integrated circuits
– Transistor

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