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NR2172 Gallium Nitride Wafer

Catalog No. NR2172
Material GaN
Thickness 4 ± 0.5 um
Conductive Type N – type
Diameter ϕ 101.6 ± 0.1 mm (4 inch diameter)
Electrical Resistance (µOhm-cm) < 0.5 Ω·cm

Stanford Advanced Materials (SAM) produces any diameters in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either undoped or doped gallium nitride wafers.




Description

Gallium Nitride Wafer Description

Gallium nitride wafer is widely used as a substrate mainly for the light-emitting diode (blue color LED, violet color LED, ultraviolet LED and white color LED) and blue-violet color laser diode for blue ray.

Gallium Nitride Wafer Specifications

Conductivity type

 N-Type (undoped)

Size

ϕ 101.6 ± 0.1 mm (4 inch diameter)

Useable area

 >90%

Orientation

C plane (0001) ± 0.5°

Orientation Flat

(1-100) ± 0.5°, 16.0 ± 1.0 mm

Secondary Orientation flat

 (11-20) ± 3°, 8.0 ± 1.0 mm

Total Thickness Variation

<15 μm

Resistivity (300K)

< 0.5 Ω·cm

Dislocation Density

< 5×10^8 cm^-2

Gallium Nitride Wafer Applications

Gallium nitride wafer has been used in:

– Light-emitting diode
– Blue violent color laser diode for blue way
– LED, LD device

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