| Catalog No. | GA2268 |
|---|---|
| Material | GaSb |
| Thickness | 400um |
| Conductive Type | N – type/ P- type |
| Diameter | Ø 2″ Ø 3″ Ø 4″ |
Stanford Advanced Materials (SAM) provides high quality single crystal GaSb gallium antimony wafer to the electronic and optoelectronic industry in diameter up to 4 inches.
Gallium antimony wafer is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski (LEC) method with EPD < 1000 cm -3. GaSb wafer has a high uniformity of electrical parameters and low defect density, suitable for MBE or MOCVD epitaxial growth. We have “epi ready” GaSb products with a wide choice in exact or off orientation, low or high doped concentration and good surface finish. Please contact us for more product information.
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Item |
Specifications |
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Dopant |
Undoped |
Zinc |
Tellurium |
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Conduction Type |
P-type |
P-type |
N-type |
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Wafer Diameter |
2” 3” 4” |
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Wafer Orientation |
(100)±0.5° |
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Wafer Thickness |
500±25um |
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Primary Flat Length |
16±2mm |
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Secondary Flat Length |
8±1mm |
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Carrier Concentration |
(1-2)x1017cm-3 |
(5-100)x1017cm-3 |
(1-20)x1017cm-3 |
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Mobility |
600-700cm2/V.s |
200-500cm2/V.s |
2000-3500cm2/V.s |
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EPD |
<2×103cm-2 |
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TTV |
<10um |
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BOW |
<10um |
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WARP |
<12um |
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Laser Marking |
upon request |
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Suface Finish |
P/E, P/P |
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Epi Ready |
yes |
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Package |
Single wafer container or cassette |
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Gallium antimony wafer has the following applications:
– 2-4mm band optical device substrate
– Microwave device
– Laminated solar cell
Submit your review | |
