| Catalog No. | CY2538 |
|---|---|
| Size | 5x5x0.1 mm;10x10x0.1mm |
| Material | Bi2Te3 |
| Orientation | Highly oriented layer structure along <0001> |
| Growth Method | High-pressure vertical bridgman |
Bismuth Telluride Single Crystal Substrates have been widely used in the industry due to their unique physical and chemical properties. Stanford Advanced Materials (SAM) can offer a variety size of Bismuth telluride Single Crystal Substrates.
Bismuth Telluride Single Crystal Substrate has a wide range of applications in the field of thermoelectric material. Stanford Advanced Materials (SAM) has rich experience in the manufacture of the Bismuth Telluride Single Crystal Substrates and can offer customers a variety size of Bismuth telluride Single Crystal Substrates at an affordable price.
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Bismuth Telluride (Bi2Te3) Single Crystal Substrate |
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Crystal Structure |
Hexagonal, group 166，R-3M |
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Grown Method |
High-pressure vertical Bridgman |
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Lattice constant |
a=4.38A c=30.5A |
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Surface |
as Cleavaged |
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Purity |
99.999%, atomic ratio |
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Melting Point |
585 oC |
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Resistivity |
0.1-5 mohm. cm |
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Mobility |
3000 cm2 / V.s |
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Packing |
packed in plastic bag with vacuum |
Bismuth Telluride Single Crystal Substrates have a wide range of applications in the field of thermoelectric material.
Submit your review | |
Good substratesLeo for its intended use.
