ST11209 CVD-Grade Silicon (Si) Sputtering Target

Complete Technical Specifications

For detailed evaluation and procurement (Product Code: ST11209).

Technical & Application Notes

1. Precision Source for Semiconductor Thin Films

This high-density, low-defect Si target is optimized for depositing critical layers where film homogeneity is paramount:

• Gate & Local Interconnect Layers: Provides a uniform source for sputtered silicon films that may be subsequently doped, silicided, or patterned in advanced logic and memory devices.
• Epitaxial-like or Polycrystalline Seed Layers: High-purity, dense films serve as high-quality seed layers for further epitaxial growth or as active poly-Si layers in devices.
• Reactive Sputtering for Dielectrics: A clean, consistent Si target is ideal for reactive sputtering in N₂ or O₂ to form uniform silicon nitride (SiNₓ) or silicon oxide (SiOₓ) barrier or insulating layers.

2. Enabling High-Performance Photovoltaic & Optical Coatings

• Thin-Film Solar Cell Absorbers: The low impurity and defect count contribute to superior electronic quality in amorphous (a-Si) or microcrystalline (µc-Si) absorber layers, directly impacting photovoltaic conversion efficiency and stability.
• Infrared Optical Components: Silicon’s transparency in the IR range makes it valuable for anti-reflection and protective coatings on lenses and windows. A dense target yields films with optimal refractive index and low optical loss.

3. Critical for Advanced Research & Development

• Multi-Layer Stack Deposition: The dimensional accuracy and surface flatness ensure reliable performance in complex multi-target deposition systems for research on superlattices or graded-composition films (e.g., SiGe).
• Fundamental Thin-Film Studies: The well-characterized, high-quality target serves as a reliable reference material for studies on sputtering dynamics, film growth mechanisms, and structure-property relationships.

4. Process Stability & Target Longevity

The manufacturing focus on high density and defect control directly benefits the end-user process:

• Reduced Arcing: Fewer micro-pores and inclusions minimize the risk of electrical arcing during sputtering, leading to higher process uptime and fewer film defects.
• Uniform Erosion: A homogeneous microstructure promotes even target erosion, extending usable target life and maintaining consistent deposition rates over time.
• Thermal Management: High density and good bonding ensure efficient heat transfer to the cooling plate, allowing for stable operation at optimal power levels.

Quality Assurance

We employ a multi-step inspection protocol to ensure target integrity:

1. Density Verification: Precise measurement to ensure values meet or exceed theoretical density, minimizing porosity.
2. Surface Defect Inspection: In-house electron microscopy (SEM) is used to identify and quantify surface imperfections, ensuring a sputter-ready finish.
3. Compositional Certification: Trace element analysis via GDMS or Spark-OES provides detailed data on dopants and metallic impurities critical for electrical applications.

Why Stanford Advanced Materials (SAM) for This Grade

• Focus on Microstructural Quality: We go beyond purity to guarantee high density and low defect counts for process stability.
• Application-Specific Manufacturing: Processes are tailored based on whether the target is intended for electronic, photovoltaic, or optical applications.
• Comprehensive Data Package: We provide not just a CoA, but also supporting data on density and surface quality upon request.

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Discuss Your Precision Deposition Needs
To ensure the ST11209 grade meets your requirements, please specify:

1. Primary application and required film properties (e.g., resistivity, optical transmission).
2. Preferred shape (round/rectangular) and exact dimensions.
3. Any specific concerns regarding process stability (e.g., arcing) or film defects.