ST11179 Cobalt Iron Tantalum Boron (CoFeTaB) Planar Sputtering Target

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11179).

Technical & Application Notes

1. Engineering High-Performance Soft Magnetic Films

Pure CoFe alloys have high Bs but suffer from large grain sizes and low electrical resistivity, leading to high eddy current losses at GHz frequencies. The strategic addition of Tantalum (Ta) and Boron (B) serves multiple critical functions:

• Grain Refinement & Amorphization: Ta and B inhibit grain growth, promoting a fine nanocrystalline or amorphous microstructure essential for low coercivity and smooth film morphology.

• Increased Resistivity: Both elements significantly increase the film’s electrical resistivity, dramatically reducing eddy current losses, which is paramount for high-frequency inductor performance.

• Thermal Stability: The resulting films exhibit improved thermal stability of magnetic properties.

2. A Target for Differentiating Device Performance

This target is not a commodity; it is a performance-enabling material for cutting-edge applications:

• RF Integrated Circuits (RFIC): For depositing magnetic cores of on-chip inductors and transformers, enabling higher inductance density and quality factor (Q) in smaller footprints for 5G/6G and IoT devices.
• Magnetic Recording Heads: Used in the trailing shield or other components of hard disk drive write heads, where high Bs and precise magnetic properties are required.
• Magnetic Sensors (TMR/GMR): Can be used as a soft magnetic reference or pinning layer where high Bs and thermal stability are beneficial.

3. Application-Specific Guidance

• High-Frequency Inductor Fabrication: The primary R&D and emerging production application. Focus is on achieving the optimal trade-off between high Bs, high resistivity, and low stress in the deposited film.
• Advanced Read/Write Head Components: Requires extremely uniform films with tight control over magnetic anisotropy and microstructure.
• Specialized Magnetic Shielding: For sensitive electronics where thin, high-permeability layers are needed.

Quality Assurance

Fabricating a homogeneous quaternary alloy with reactive elements like Ta is complex. We utilize Vacuum Arc Melting or Induction Melting in inert atmosphere, followed by homogenization treatments. Composition is verified via ICP-OES or X-ray Fluorescence (XRF), and microstructural homogeneity is confirmed by SEM/EDS mapping. This ensures the target provides a consistent flux of all four elements.

Why Stanford Advanced Materials (SAM)

• Specialist in Complex Magnetic Alloys: We have the expertise to alloy and process challenging combinations of magnetic and refractory metals (Co, Fe, Ta) with metalloids (B).
• R&D Partnership Focus: We work with leading research groups and companies developing next-generation high-frequency magnetic devices.
• Precision in Composition Control: We guarantee the precise elemental ratios required to achieve the target film’s magnetic and electrical properties.

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Discuss Your Application & Request a Custom Composition Quote
This is a specialized alloy for performance-driven applications. To proceed, please provide:

1. Desired film properties or target application (e.g., GHz on-chip inductor core).
2. Preferred or starting composition (if known) or key property targets (Bs, Hc, ρ).
3. Target dimensions and bonding requirements.