ST11178 Iron Cobalt Boron (CoFeB) Rotary Sputtering Target

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11178).

Technical & Application Notes

1. The Material Heart of MRAM Technology

CoFeB, particularly the Co₆₀Fe₂₀B₂₀ composition, is the industry-standard material for the magnetic layers in perpendicular magnetic anisotropy (PMA) MTJs. The boron (B) content is crucial: it promotes the formation of an amorphous as-deposited film, which, upon subsequent annealing, crystallizes with a bcc (001) texture interfaced with an MgO tunnel barrier, enabling exceptionally high TMR ratios. Our target guarantees the precise stoichiometry needed for this controlled crystallization process.

2. Why Rotary Design for CoFeB?

For high-volume semiconductor production (e.g., 300mm wafer fab lines for embedded MRAM), rotary targets offer decisive advantages:

• Unmatched Uniformity: Essential for depositing nanometer-thick magnetic layers with consistent properties across entire wafers, directly impacting device yield and performance distribution.
• High Material Utilization: Critical for cost-effective production of these high-value-added chips.
• Stable Long-Run Performance: The continuous rotation minimizes local heating and maintains stable erosion, ensuring the composition of the sputtered flux remains constant over the target’s lifetime.

3. Application-Specific Guidance

• MRAM Manufacturing (STT-MRAM, SOT-MRAM): This is the primary application. Target purity and compositional control are non-negotiable for achieving low defect densities, high TMR, and reliable switching endurance.
• Advanced Magnetic Sensors: Used in high-sensitivity TMR or GMR sensors for automotive, industrial, and biomedical applications, where signal consistency and low noise are paramount.
• Spintronics Research: For developing new device concepts such as spin-orbit torque devices, magnetic logic, and neuromorphic computing elements.
• Read Heads for HAMR/MAMR: May be used in next-generation hard disk drive read heads that utilize advanced magnetic materials.

Quality Assurance

Given the criticality of composition, we employ Vacuum Induction Melting (VIM) under inert atmosphere followed by homogenization to achieve a uniform ingot. Final composition is verified using Wavelength Dispersive Spectroscopy (WDS) or Inductively Coupled Plasma (ICP) analysis. For rotary targets, we additionally provide EDX elemental mapping on a cross-section to demonstrate radial and axial homogeneity, ensuring every segment of the tube sputters identically.

Why Stanford Advanced Materials (SAM)

• Semiconductor-Focused Expertise: We produce targets to the exacting standards of the semiconductor industry, with full traceability and documentation.
• Advanced Magnetic Materials Specialists: We understand the physics and metallurgy behind high-performance magnetic films.
• Collaborative Development: We work with leading MRAM developers to tailor compositions (e.g., varying Fe/Co ratio, adding dopants like Ta) for specific performance optimization.

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Get a Formal Quote or Composition Consultation
To discuss your CoFeB film requirements for MRAM or sensor production, please provide:

1. Desired composition (standard Co₆₀Fe₂₀B₂₀ or custom ratios).
2. Rotary target dimensions or your cathode model.
3. Application context (e.g., MRAM production node, R&D for new sensor).