Engineered for RF or pulsed-DC sputtering, our high-density Aluminum Oxide (Al₂O₃) Planar Targets deliver stoichiometric, high-quality films with excellent insulation, hardness, and chemical stability, making them ideal for the most demanding optical and electronic applications.
| Material | Aluminum Oxide (Al₂O₃) |
| Purity | ≥ 99.99% (4N) |
| Form | Planar Sputtering Target |
| Shape | Rectangular (Standard) |
Key Advantage: High density and phase purity ensure stable sputtering of stoichiometric Al₂O₃ films with excellent dielectric strength and adhesion.
Customization: Dimensions (thickness, length, width) and bonding to backing plates fully customizable.
Typical Applications: Optical anti-reflection & protective coatings, semiconductor gate dielectrics & passivation layers, wear-resistant tribological coatings, and diffusion barriers.
For detailed evaluation and procurement (Standard Reference: ST11168).
| Parameter | Specification / Typical Value | Notes / Process Relevance |
|---|---|---|
| Material | Aluminum Oxide (Al₂O₃) | Alpha-phase (α-Al₂O₃) or other phases available upon request. |
| Purity (Standard) | ≥ 99.99% (4N) | Ultra-high purity minimizes coloration and optical absorption, and ensures electrical property consistency. |
| Density | ≥ 3.90 g/cm³ (Typically >97% T.D.) | High density is critical for achieving high deposition rates, low porosity films, and reducing arcing. |
| Phase Composition | Predominantly α-Al₂O₃ (Corundum) | The stable phase offers superior hardness and chemical inertness in the deposited film. |
| Grain Size | < 5 μm (Controlled) | Fine grain structure promotes uniform erosion and smooth film morphology. |
| Standard Shape | Rectangular | Circular and other custom geometries available. |
| Minimum Thickness | ≥ 3 mm | Sufficient mechanical strength for handling and bonding; thicker targets available for extended life. |
| Melting Point | 2054 °C | — |
| Dielectric Constant (κ) | ~9 (Film, typical) | Key parameter for electronic and capacitive applications. |
| Band Gap | ~8.7 eV (Film, typical) | Excellent insulating properties. |
| Knoop Hardness (Target) | ~2000 kg/mm² | Indicates high mechanical durability. |
| Sputtering Method | RF (Primary), Pulsed-DC Reactive | Optimized for insulating ceramic materials. |
| Bonding Options | Direct bonding or brazing to OFHC Cu, Mo, or SS backing plates | Ensures effective heat dissipation and mechanical integrity during sputtering. |
| Certification | Certificate of Analysis (CoA) provided | Confirms purity, phase, density, and key physical properties. |
1. Density and Phase Purity: The Foundation of Film Quality
For ceramic targets like Al₂O₃, achieving high density (>97% of theoretical) is paramount. It prevents the formation of porous, low-density films that are prone to water vapor absorption and have inferior mechanical and barrier properties. Our targets are processed via high-temperature sintering under controlled atmospheres to achieve full density and the desired α-phase corundum structure, ensuring film stoichiometry and performance.
2. Optimized for RF and Reactive Sputtering Processes
As an electrical insulator, Al₂O₃ requires RF sputtering or pulsed-DC reactive sputtering (from an Al metal target in an oxygen atmosphere). Our targets are engineered with high purity and density to provide stable impedance during RF sputtering, minimizing arcing and leading to uniform, defect-free dielectric films.
3. Application-Specific Guidance
Each Al₂O₃ target undergoes comprehensive inspection, including X-ray diffraction (XRD) for phase identification, Archimedes density measurement, ultrasonic testing for internal flaws, and surface flatness verification. This ensures every target meets the stringent requirements for high-performance thin-film deposition.
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