ST0947 Indium Arsenide Sputtering Target, InAs

Indium Arsenide Sputtering Target Description

Indium Arsenide Sputtering Targets, crafted from high-purity Indium Arsenide (InAs), find extensive use in both chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. Leveraging the distinctive properties of Indium Arsenide, these targets play a pivotal role in semiconductor, microwave, and electrical applications.

Indium Arsenide (InAs) exhibits a conductivity level between that of a conductor and an insulator, embodying semiconductor properties. This versatile material has widespread applications in electronics and photonics and is instrumental in the preparation of semiconductor nanostructures.

With a direct energy gap, Indium Arsenide requires relatively small amounts of energy for electron and hole transitions, making it exceptional for optoelectronics. Devices like lasers and detectors benefit greatly from InAs’s direct energy gap. The high electron mobility of Indium Arsenide further enhances its utility in high-frequency and microwave devices.

Beyond its electronic prowess, Indium Arsenide proves thermally stable across a range of temperatures. Under specific conditions, it can even exhibit topological insulator properties, contributing to research in topological quantum computing.

Related Product: Indium Iron Oxide Sputtering Target, Indium Sputtering Target

Indium Arsenide Sputtering Target Specifications

Indium Arsenide Sputtering Target Handling Notes

1. Indium bonding is recommended for the Indium Arsenide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

Indium Arsenide Sputtering Target Application

1. Laser and detector preparation: Indium Arsenide Sputtering Targets are used for sputter deposition to prepare devices such as lasers and photodetectors.
2. Semiconductor Device Preparation: In the semiconductor industry, Indium Arsenide Sputtering Targets are used in sputter deposition to prepare thin films for integrated circuits and other electronic devices.
3. Microwave and RF devices: The high electron mobility of Indium Arsenide Sputtering Targets makes them very useful in high-frequency and microwave devices.
4. Topological insulator research: Indium Arsenide Sputtering Targets have potential applications in topological physics research. Researchers use them to conduct experiments and exploration in the field of topological insulators.
5. Energy storage applications: Indium Arsenide (InAs) is being studied as a material for metal halide sodium-ion batteries for energy storage applications.
6. Semiconductor nanostructure preparation: Indium Arsenide Sputtering Targets can be used to prepare semiconductor nanostructures such as nanowires and nanodots for research and development of novel nanoelectronic devices.

Indium Arsenide Sputtering Target Packaging

Our Indium Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Indium Arsenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.