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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

SC2276 Silicon on Insulator, SOI Wafer

Catalog No. SC2276
Material Si
Diameter Ø 4″ / Ø 6″ / Ø 8″
Dopant Boron/Phosphorous/Antimony/Arsenic
Conductivity P-type/N-type / Intrinsic

Stanford Advanced Materials (SAM) provides silicon on insulator (SOI) wafer in diameter from 2″ to 12″. We always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.




Description

Silicon on Insulator, SOI Wafer Description

Silicon on insulator (SOI) wafers are most common in microelectromechanical systems (MEMS) and advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit fabrication and can improve many of the processes that more traditional silicon wafers are used in. These wafers provide a manufacturing solution that helps reduce power and heat while increasing the speed performance of a device. SOI wafers are unique products for specific end-user applications.

Silicon on Insulator, SOI Wafer Specification

Method

Fusion bonding

Diameter

Ø 4″/ Ø 6″ / Ø 8″

Device thickness

2 um ~ 300 um

Tolerance

+/- 0.5 um ~ 2 um

Orientation

<100> / <111> / <110> or others

Conductivity

P-type / N-type / Intrinsic

Dopant

Boron / Phosphorous / Antimony / Arsenic

Resistivity

0.001 ~ 100000 ohm-cm

Oxide thickness

500A ~ 4 um

Tolerance

+/- 5%

Handle wafer

>= 300 um

Surface

Double sides polished

Coating

Oxide and nitride can be supplied on both sides of SOI wafer

Silicon on Insulator, SOI Wafer Application

The application areas of silicon on insulator (SOI) wafer include pressure sensors, silicon microphones, and fluidic components, while thicker layers are suitable for inertial sensor manufacturing. It can also be used in IC and MEMS process integration. It also enables integrated backside packaging and hermetic sealing.

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Silicon on Insulator, SOI Wafer
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