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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

CY2175 Silicon Carbide Wafer

Catalog No. CY2175
Material SiC
Thickness 330 um ~ 350 um
Conductive Type N – type / Semi-insulating
Diameter Ø 2″ / Ø 3″ / Ø 4″
Polytype 4H / 6H
Resistivity ( SI ) > 1E5 ohm-cm

Stanford Advanced Materials (SAM) is a global manufacturer of Silicon Carbide Wafer. With our rich experience and knowledge in the wafer industry, you can be confident in making SAM your first choice.




Description

Silicon Carbide Wafer Description

As a next-generation semiconductor material, silicon carbide wafer has unique electrical properties and excellent thermal properties. The sic-based device has been used for short-wavelength optoelectronic, high temperature, radiation resistant applications. In the applications of high power and high temperature, SiC wafer is more suitable compared to the silicon wafer and GaAs wafer.

Silicon Carbide Wafer Specification

Polytype

4H / 6H

Diameter

Ø 2″ / Ø 3″ / Ø 4″

Thickness

330 um ~ 350 um

Orientation

On axis <0001> / Off axis <0001> off 4°

Conductivity

N – type / Semi-insulating

Dopant

N2 ( Nitrogen ) / V ( Vanadium )

Resistivity  ( 4H-N )

0.015 ~ 0.03 ohm-cm

Resistivity  ( 6H-N )

0.02 ~ 0.1 ohm-cm

Resistivity  ( SI )

> 1E5 ohm-cm

Surface

CMP polished

TTV

≤ 15 um

Bow / Warp

≤ 25 um

Grade

Production grade / Research grade


Polytype

6H-SiC

4H-SiC

Crystal stacking sequence

ABCABC

ABCB

Lattice parameter

a=3.073A , c=15.117A

a=3.076A , c=10.053A

Band-gap

3.02 eV

3.27 eV

Dielectric constant

9.66

9.6

Refraction Index

n0 =2.707 , ne =2.755

n0 =2.719 ne =2.777

Silicon Carbide Wafer Application

Silicon carbide wafers have the following applications:

– High-frequency device
– High power device
– GaN epitaxy device
– High-temperature device
– Optoelectronic device
– Light-emitting diode

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Silicon Carbide Wafer
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