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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

IN2271 Indium Arsenide Wafer

Catalog No. IN2271
Material InAs
Thickness 500 um- 625 um
Conductive Type N – type/ P- type
Diameter Ø 2″ Ø 3″

Stanford Advanced Materials (SAM) provides high quality single crystal indium arsenide wafer to the electronic and optoelectronic industry in diameter up to 3 inches.




Description

Indium Arsenide Wafer Description

Indium arsenide wafer is made of a crystalline compound made by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski (LEC) method with EPD < 15000 cm -3. InAs crystal has high uniformity of electrical parameters and low defect density, suitable for MBE or MOCVD epitaxial growth. We have “epi ready” InAs products with a wide choice in exact or off orientation, low or high doped concentration and surface finish. Please contact us for more product information.

Indium Arsenide Wafer Specifications

Growth

LEC

Diameter

Ø 2″ / Ø 3″

Thickness

500 um – 625 um

Orientation

<100> / <111> / <110> or others

Off orientation

Off 2° to 10°

Surface

One side polished or two sides polished

Flat options

EJ or SEMI. Std .

TTV

<= 10 um

EPD

<= 15000 cm-2

Grade

Epi polished grade / mechanical grade

Package

Single wafer container

Indium Arsenide Wafer Applications

Indium arsenide wafer has the following applications:

– Used in higher-power applications at room temperature
– Used for making of diode lasers
– Construction of infrared detectors

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Indium Arsenide Wafer
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