(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0886 Germanium Antimony Telluride Sputtering Target, GST

Chemical Formula Ge2Sb2Te5
Catalog No. ST0886
CAS Number 243854-63-9
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

The Germanium Antimony Telluride Sputtering Target is available in various forms, purities, sizes, and prices. Stanford Advanced Materials (SAM) offers high-quality Germanium Antimony Telluride Sputtering Target at the most competitive prices.




Description

Germanium Antimony Telluride Sputtering Target Description

Germanium Antimony Telluride Sputtering Target is a material used in thin-film deposition processes, particularly in the semiconductor industry. Sputtering is a form of physical vapor deposition (PVD) in which thin films are deposited on a substrate by bombarding a solid target material with high-energy ions.

GeSbTe is a compound semiconductor material that exhibits unique properties, making it suitable for various applications. It is commonly used in the production of phase-change random access memory (PRAM) devices, where its ability to switch between amorphous and crystalline states at different temperatures allows data storage and retrieval. GeSbTe-based thin films can also be used in other electronic devices, such as optical storage media, rewritable CDs, DVDs, and Blu-ray discs.

Germanium Antimony Telluride Sputtering Target Specifications

Compound Formula Ge2Sb2Te5
Molecular Weight 322 g/mol (GeSbTe) / 1026.8 (GeSbTe – Ge2Sb2Te5)
Appearance Silvery-gray metallic target
Melting Point >600℃
Density 6.35 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Antimony Telluride Sputtering Target Handling Notes

  1. Indium bonding is recommended for Germanium Antimony Telluride Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Antimony Telluride Sputtering Target Application

Germanium Antimony Telluride Sputtering Target is typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

Germanium Antimony Telluride Sputtering Target Packaging

Our Germanium Antimony Telluride Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

Get Contact

SAM’s Germanium Antimony Telluride Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high purity physical vapor deposition (PVD) materials with the highest possible density and most petite possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.

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Germanium Antimony Telluride Sputtering Target
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