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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

GA2269 Gallium Phosphide Wafer

Catalog No. GA2269
Material GaP
Thickness 400um
Conductive Type N – type
Diameter Ø 2″

Stanford Advanced Materials (SAM) provides high quality single crystal GaP gallium phosphide wafer to the electronic and optoelectronic industry in diameter up to 2 inches.




Description

Gallium Phosphide Wafer Description

GaP single crystal is usually grown by LEC technique using 6N high purity materials. Gallium phosphide wafer is an important semiconductor material that has unique electrical properties as other III-V compound materials and is widely used as red, yellow, and green LED (light-emitting diodes).

Gallium Phosphide Wafer Specification

Growth LEC
Diameter Ø 2″
Thickness 400 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
EPD <= 2E5 cm-2
Grade Epi polished grade / mechanical grade

Gallium Phosphide Wafer Application

Gallium phosphide wafer is used in Opto device: Visible LED such as display element (red, green) and backlight of LCD (yellow, green) etc.

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Gallium Phosphide Wafer
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