|Conductive Type||N – type|
Stanford Advanced Materials (SAM) provides high quality single crystal GaP gallium phosphide wafer to the electronic and optoelectronic industry in diameter up to 2 inches.
GaP single crystal is usually grown by LEC technique using 6N high purity materials. Gallium phosphide wafer is an important semiconductor material that has unique electrical properties as other III-V compound materials and is widely used as red, yellow, and green LED (light-emitting diodes).
|Orientation||<100> / <111> / <110> or others|
|Off orientation||Off 2° to 10°|
|Surface||One side polished or two sides polished|
|Flat options||EJ or SEMI. Std .|
|TTV||<= 10 um|
|EPD||<= 2E5 cm-2|
|Grade||Epi polished grade / mechanical grade|
Gallium phosphide wafer is used in Opto device: Visible LED such as display element (red, green) and backlight of LCD (yellow, green) etc.
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