Our Tantalum Carbide (TaC) Planar Sputtering Targets are engineered from one of the hardest known refractory compounds. Designed for depositing ultra-hard, wear-resistant, and chemically inert ceramic thin films, TaC targets are essential for applications demanding extreme surface durability and thermal stability in aggressive operational environments.
| Product Code | ST11215 (Standard Reference) |
| Material | Tantalum Carbide (TaC) |
| Typical Purity | ≥ 99.9% |
| Form & Shape | Planar Sputtering Target (Rectangular/Disc, Customizable) |
| Key Properties | Extreme Hardness (~16-20 GPa) | High Melting Point (~3880°C) | Excellent Wear & Chemical Resistance |
| Key Advantage | Enables deposition of ultra-hard, protective ceramic coatings that significantly extend the service life of components exposed to severe wear, high temperatures, or corrosive media. |
Key Advantage: Produces films with exceptional hardness and thermal stability, offering superior protection against abrasion, oxidation, and chemical attack compared to metallic coatings.
Customization: Stoichiometry (Ta:C ratio), purity, dimensions, and bonding are fully customizable to meet specific process and performance requirements.
Primary Applications: Wear-resistant coatings for cutting tools and forming dies; protective layers on aerospace components; diffusion barriers and hard masks in semiconductor processing; tribological coatings for mechanical parts.
Comprehensive specifications for the deposition of advanced ceramic films. All parameters are tailored to optimize coating performance and process integration.
| Parameter | Specification / Details |
|---|---|
| Material | Tantalum Carbide (TaC) |
| Typical Purity | ≥ 99.9% (Higher grades available) |
| Crystal Structure | Face-Centered Cubic (FCC) – NaCl (Rock Salt) type |
| Stoichiometry | Typically near 1:1 Ta:C (Customizable within a range, e.g., TaC0.9 to TaC1.0) |
| Density | ~14.3 – 14.5 g/cm³ (Theoretical ~14.5 g/cm³) |
| Melting Point | Approx. 3880 °C (7016 °F) – One of the highest known |
| Microhardness (Vickers) | ~16 – 20 GPa (Material dependent) |
| Thermal Conductivity | ~21 W/(m·K) at 20°C |
| Standard Shape | Planar – Rectangular, Circular (Disc), or Custom |
| Dimensions | Fully Customizable (Thickness, Length, Width, Diameter) |
| Surface Finish | Optimized for ceramic sputtering (e.g., ground and polished) |
| Bonding Option | Available bonded to copper or other backing plates using specialized high-temperature bonding techniques compatible with ceramic targets. |
| Manufacturing Method | Reactive Sintering / Hot Pressing to achieve high density and uniformity. |
| Quality Documentation | Certificate of Analysis (CoA) provided, confirming composition, density, and phase purity. |
Tantalum Carbide coatings deposited from these targets offer a unique combination of properties for surface engineering:
TaC’s properties enable its use in several advanced technological areas:
Sputtering from a compound ceramic target like TaC requires specific process understanding:
Stanford Advanced Materials ensures the highest quality through controlled ceramic processing:
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