ST11210 Silicon Carbide (SiC) Planar Sputtering Target

Complete Technical Specifications

For detailed evaluation and procurement (Product Code: ST11210).

Technical & Application Notes

1. Advantages of the Planar Target Geometry for SiC

The rectangular planar form is the industry standard for magnetron sputtering sources due to:

• Uniform Erosion Profile: Promotes even material utilization and consistent deposition rates over the target’s lifetime.
• Optimized Plasma Confinement: Works efficiently with planar magnetrons to create a dense plasma above the target surface, enhancing sputtering efficiency.
• Ease of Integration & Bonding: The flat back surface allows for reliable, full-area bonding to a water-cooled backing plate, which is critical for managing heat during the RF sputtering of SiC.
• Compatibility: Designed to fit most commercial planar sputter source assemblies without modification.

2. The Ultimate Protective Coating for Extreme Environments

SiC films deposited from our planar targets offer a unique combination of properties for surface engineering:

• Wear & Abrasion Resistance: Applied via planar magnetron sputtering to cutting tools, molds, and bearings to drastically extend service life.
• Corrosion & Oxidation Protection: Used as a barrier coating on metallic components in chemical and aerospace sectors.
• Automotive & Aerospace Components: Deposited on piston rings or turbine blades to enhance durability under high stress.

3. Critical Semiconductor & Advanced Electronics Applications

Beyond mechanical protection, SiC’s electronic properties are leveraged:

• Diffusion Barrier Layers: Thin, uniform SiC films from planar targets prevent intermigration in integrated circuits.
• Hard Mask for Etching: SiC’s etch selectivity makes it an excellent hard mask material in advanced semiconductor patterning.

4. Sputtering Process Considerations for SiC Planar Targets

Sputtering from a SiC planar ceramic target requires specific process adaptations:

• RF Power Required: As an insulating material, RF planar magnetron sputtering is the standard technique.
• High-Density Planar Target Critical: Minimizes porosity, reducing arcing and particles.
• Effective Cooling: The planar bonding interface must be optimized for maximum heat transfer to the cooling plate.

Quality Assurance

For SiC planar targets, we ensure:

1. Planarity & Surface Finish: Precise machining to ensure flatness and a smooth surface for uniform bonding and sputtering.
2. X-ray Diffraction (XRD): Verifies crystal phase and purity.
3. Archimedes Density Measurement: Ensures high density for performance.
4. Microstructural Analysis (SEM): Inspects grain uniformity.

Why Stanford Advanced Materials (SAM)

• Precision-Engineered Planar Geometry: Our targets are machined to exacting tolerances for optimal fit and performance in your sputter source.
• Advanced Ceramics Expertise: We master the sintering of high-performance planar ceramic targets like SiC.
• Focus on Functional Properties: We deliver targets optimized for the final coating’s hardness, density, and stability.

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Specify Your Planar Sputtering Needs
To provide an accurate quote, please specify:

1. Your planar magnetron sputter source model or required target dimensions (Length x Width x Thickness).
2. Primary application and key film property goals.
3. Preferred SiC crystal phase (α or β) and purity grade.