ST11207 Ferroelectric PZT Sputtering Target, Lead Zirconate Titanate (Pb(Zr,Ti)O₃)

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11207).

Technical & Application Notes

1. The Material of Choice for Smart Systems: MEMS & Sensors

PZT thin films offer the highest piezoelectric coefficients among practical materials, making them indispensable for:

• MEMS Actuators & Energy Harvesters: Used to convert electrical signals into precise mechanical motion (e.g., inkjet printheads, micromirrors) or ambient vibration into electrical energy.
• Ultrasonic Transducers & Sensors: High sensitivity makes PZT ideal for medical ultrasound imaging, non-destructive testing (NDT), and precision distance/proximity sensors.
• Inertial Sensors: Integrated into gyroscopes and accelerometers for improved performance in consumer electronics and automotive systems.

Target Key: A homogeneous target at the Morphotropic Phase Boundary (MPB, Zr/Ti ~52/48) is critical to achieve the maximum piezoelectric response (d₃₃) in the deposited film.

2. Enabling Next-Generation Memory: Ferroelectric RAM (FeRAM)

PZT’s non-volatile ferroelectric polarization allows it to function as a memory element. Sputtering from a high-quality, phase-pure PZT target is a key process for depositing the active layer in FeRAM cells, which offer fast write speeds, low power consumption, and high endurance compared to conventional Flash memory.

3. Specialized Optoelectronic & Acoustic Applications

• Pyroelectric Detectors: PZT films are sensitive to changes in temperature, making them suitable for uncooled infrared (IR) detectors in thermal imaging and motion sensing.
• Surface Acoustic Wave (SAW) Devices: Used in filters and resonators for RF and wireless communication systems.

4. Deposition & Process Integration Considerations

Sputtering PZT requires careful process control to achieve the correct film crystallinity (often requiring post-deposition annealing):

• RF Sputtering: Essential for depositing this insulating ceramic material.
• Oxygen Ambient: Reactive sputtering in an Ar/O₂ mix is typically used to prevent oxygen deficiency and maintain stoichiometry.
• Substrate & Electrode Compatibility: Film properties are highly dependent on the bottom electrode (e.g., Pt, Ir, LNO) and substrate (e.g., Si, SiO₂, MgO).
• Lead Volatility Management: Process parameters must be optimized to compensate for potential lead loss during deposition and annealing to maintain the correct Pb:(Zr+Ti) ratio.

Quality Assurance

For functional ceramic targets like PZT, chemical composition and crystal phase are as critical as purity. Our quality protocol includes:

1. Quantitative X-ray Diffraction (XRD): Guarantees the dominant perovskite phase and quantifies undesirable pyrochlore or other secondary phases.
2. Inductively Coupled Plasma (ICP) Analysis: Verifies the precise Pb, Zr, and Ti stoichiometry and quantifies trace impurities.
3. Surface Profilometry & Density Measurement: Ensures target density, surface uniformity, and absence of large pores or cracks for stable, arcing-free sputtering.

Why Stanford Advanced Materials (SAM)

• Functional Ceramics Expertise: We specialize in oxide targets where stoichiometry and phase define performance, not just purity.
• Tailored Stoichiometry: We can adjust the Zr/Ti ratio to suit your specific research or device needs, moving beyond the standard MPB composition.
• Full-Process Support: From target manufacturing to providing guidance on RF sputtering and annealing parameters for PZT films.

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Specify Your Application for Optimal Configuration
To ensure you receive the most suitable PZT target, please provide details on:

1. Primary application (e.g., MEMS actuator, FeRAM research, pyroelectric sensor).
2. Desired Zr/Ti ratio and required crystal phase (if known).
3. Target dimensions, shape, and bonding requirements.
4. Any specific film property goals (e.g., d₃₃, P_r, ε_r).