ST11193 Indium Tin (InSn) Alloy Rotary Sputtering Target

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11193).

Technical & Application Notes

1. Enabling Low-Temperature Processing in Microsystems
The primary application of InSn films is as a low-temperature solder or bonding layer. Sputtered InSn films can be patterned and then heated just above their eutectic temperature (e.g., ~118°C for In-48Sn) to reflow, creating a hermetic seal or an electrical/thermal interconnect. This is invaluable for:

• MEMS & Sensor Packaging: Sealing sensitive devices without damaging internal structures.
• Optoelectronics Packaging: Bonding lasers, photodiodes, or optical components where traditional high-temperature solders are prohibitive.

2. A Metallic Route to Transparent Conductors
An alternative to sputtering from a ceramic ITO target is to sputter a metallic InSn alloy film and then oxidize it in a controlled atmosphere (e.g., O₂ plasma, thermal annealing). This two-step process can sometimes offer better step coverage and composition control on complex 3D structures. The composition of the initial alloy film (e.g., In-10Sn) directly determines the properties of the final oxidized ITO layer.

3. The Importance of Rotary Design for Uniformity
Whether for bonding or precursor applications, film uniformity is critical. A rotary InSn target provides:

• Exceptional Compositional Uniformity: Ensures the sputtered alloy film has the same In:Sn ratio across the entire substrate (wafer or panel), which is essential for consistent melting behavior or oxidation results.
• High Material Utilization: Maximizes the use of expensive indium.
• Stable Deposition: The continuous rotation helps manage the low melting point challenge by distributing heat more evenly.

4. Special Handling and Process Considerations
Like pure indium, InSn alloys have low melting points and are soft. Sputtering requires:

• Robust Cooling: The rotary cathode must have excellent thermal contact and cooling capacity.
• Low Power Density: Process parameters must be carefully controlled to avoid target surface melting.
• Clean, Controlled Environment: To prevent oxidation of the sputtered film before intended processing.

Quality Assurance

We guarantee precise alloy composition using Inductively Coupled Plasma (ICP) analysis. Differential Scanning Calorimetry (DSC) can be performed to confirm the melting point of the alloy ingot, which validates the composition. Microstructural analysis (SEM/EDS) ensures homogeneity and the absence of detrimental phases or segregation. This comprehensive characterization ensures predictable performance in your delicate processes.

Why Stanford Advanced Materials (SAM)

• Expertise in Low-Melting-Point Alloys: We specialize in the metallurgy and target fabrication of challenging systems like InSn.

• Understanding of Advanced Packaging: We supply materials for cutting-edge MEMS, photonics, and heterogeneous integration applications.

• Precision Alloying Capability: We deliver targets with accurate, homogeneous compositions for reliable and repeatable process results.

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Discuss Your Application & Request a Quote
InSn targets serve specialized processes. For an accurate specification, please provide:

1. Desired Tin content (wt.%) or target melting point/application (e.g., bonding at 120°C, ITO precursor).
2. Rotary target dimensions or your coating system model.
3. Substrate details and post-deposition process (e.g., reflow, oxidation).