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ST11172 Aluminum Zinc Indium Silicon Planar Target, AlZnInSi Target

Our Aluminum Zinc Indium Silicon (AlZnInSi) planar targets represent a sophisticated material platform for depositing complex oxide or nitride films. This multi-principal element alloy serves as a versatile precursor for exploring novel Transparent Conductive Oxides (TCOs), high-performance diffusion barriers, and corrosion-resistant coatings through reactive sputtering.

Material AlZnInSi Quaternary Alloy
Composition Al, Zn, In, Si (Ratios Customizable)
Typical Purity ≥ 99.9% (Metal Basis, 4N)
Form Planar Sputtering Target

Key Advantage: A single target enabling the co-deposition of four critical elements, allowing rapid screening and optimization of complex multi-component oxide/nitride films (e.g., AZO, IZO, and their doped variants).
Customization: Elemental ratios (Al:Zn:In:Si), dimensions, and bonding fully customizable for your research or development needs.
Typical Applications: Research on next-generation TCOs (e.g., for displays, solar cells), high-entropy ceramic films, advanced diffusion barriers, and corrosion-resistant coatings.




Description

Complete Technical Specifications

For detailed evaluation and procurement (Standard Reference: ST11172).

Parameter Specification / Capability Notes / Process Relevance
Material Type Quaternary Alloy (Al-Zn-In-Si) A precursor for complex oxide/nitride systems via reactive sputtering.
Composition Standard Customizable (e.g., near-equimolar or biased toward specific TCO systems like Zn-rich for AZO or In-rich for IZO) We tailor ratios to match your research objectives (e.g., exploring (Al,Zn,In,Si)Oₓ or (Al,Zn,In,Si)Nᵧ).
Base Purity ≥ 99.9% (4N) on Metal Basis High purity of constituent metals ensures clean film chemistry and reliable property evaluation.
Typical Density ~4.5 – 6.0 g/cm³ (Alloy-dependent) Achieved via vacuum melting or advanced powder metallurgy for homogeneity.
Microstructure Homogeneous, Single-Phase or Fine Multi-Phase Critical for uniform elemental emission during sputtering. Controlled via specialized metallurgy.
Standard Shape Rectangular Planar Target Circular and other geometries available.
Dimensions Fully Customizable (Thickness ≥ 3mm recommended) Sized for your research magnetron.
Sputtering Method DC Magnetron (for metallic mode), Pulsed-DC or RF Reactive Sputtering Ideal for reactive deposition in O₂/N₂/Ar atmospheres to form oxides or nitrides.
Bonding Options Bonding to Cu/Mo backing plate available for improved heat dissipation. Recommended for stable reactive sputtering processes.
Certification Certificate of Composition (CoC) provided Precise quantification of all four elements via ICP-MS or similar, with homogeneity mapping available.

Technical & Application Notes

1. A Versatile Precursor for Complex Functional Oxides

This target is not for a single application but for materials discovery and optimization. It allows researchers to explore a vast compositional space in systems like:

  • TCO Development: By reactively sputtering in oxygen, you can explore doped and multi-cation TCOs beyond standard ITO or AZO. Silicon doping, for instance, can potentially enhance stability or modify carrier concentration.
  • High-Entropy Oxides/Nitrides (HEOs/HENs): The four principal elements in near-equimolar ratios can form single-phase high-entropy oxide or nitride films with potentially unique combinations of hardness, corrosion resistance, and electrical properties.
  • Advanced Barrier Layers: Complex, amorphous multi-metal oxide or nitride films often exhibit superior diffusion barrier properties compared to simple binaries (e.g., TiN, TaN).

2. The Challenge and Assurance of Homogeneity

Creating a homogeneous alloy from four elements with different melting points and mutual solubilities (e.g., Al/In) is a significant metallurgical challenge. SAM employs techniques like arc melting with repeated flipping or mechanical alloying followed by spark plasma sintering (SPS) to achieve a uniform, fine-grained microstructure. This ensures that the sputtered flux accurately represents the intended bulk composition.

3. Primary Research & Development Applications

  • Next-Generation Display & PV Technologies: For developing alternative TCOs with improved conductivity, transparency, flexibility, or cost profiles compared to ITO.
  • Protective & Functional Coatings: Exploring new, ultra-hard, or highly corrosion-resistant multi-component ceramic coatings for aerospace, automotive, or cutting tools.
  • Fundamental Materials Science: Studying phase formation, amorphous/crystalline transitions, and structure-property relationships in complex multi-cation thin-film systems.
  • MEMS & Advanced Packaging: Investigating novel dielectric, barrier, or functional layers for microsystems.

Quality Assurance

Given the complexity, quality control is paramount. We provide a detailed Certificate of Composition (CoC) from inductively coupled plasma mass spectrometry (ICP-MS). Optional services include Electron Probe Microanalysis (EPMA) or WDS mapping to visually demonstrate elemental homogeneity across the target face, providing you with confidence in the reproducibility of your deposition experiments.

Why Stanford Advanced Materials (SAM)

  • Specialist in Complex Alloys: We accept the challenge of fabricating homogeneous targets from difficult or immiscible element combinations.
  • Partner in Research: We work closely with university and corporate R&D teams to fabricate custom compositions that push the boundaries of thin-film materials.
  • Precision & Documentation: We provide the high-quality targets and detailed analytical data required for publishable and patentable research.

Discuss Your Project & Request a Custom Composition Quote

This is a collaborative development product. To proceed, please share:

  1. Your target application/research goal (e.g., “developing a Si-doped IZO TCO” or “synthesizing AlZnInSiOx high-entropy oxide”).
  2. Desired or starting compositional ratios (at.% or wt.% of Al, Zn, In, Si).
  3. Target dimensions and any bonding requirements.