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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

GA2268 Gallium Antimony Wafer

Catalog No. GA2268
Material GaSb
Thickness 400um
Conductive Type N – type/ P- type
Diameter Ø 2″ Ø 3″ Ø 4″

Stanford Advanced Materials (SAM) provides high quality single crystal GaSb gallium antimony wafer to the electronic and optoelectronic industry in diameter up to 4 inches.




Description

Gallium Antimony Wafer Description

Gallium antimony wafer is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski (LEC) method with EPD < 1000 cm -3. GaSb wafer has a high uniformity of electrical parameters and low defect density, suitable for MBE or MOCVD epitaxial growth. We have “epi ready” GaSb products with a wide choice in exact or off orientation, low or high doped concentration and good surface finish. Please contact us for more product information.

Gallium Antimony Wafer Specification

Item

Specifications

Dopant

Undoped

Zinc

Tellurium

Conduction Type

P-type

P-type

N-type

Wafer Diameter

2” 3” 4”

Wafer Orientation

(100)±0.5°

Wafer Thickness

500±25um

Primary Flat Length

16±2mm

Secondary Flat Length

8±1mm

Carrier Concentration

(1-2)x1017cm-3

(5-100)x1017cm-3

(1-20)x1017cm-3

Mobility

600-700cm2/V.s

200-500cm2/V.s

2000-3500cm2/V.s

EPD

<2×103cm-2

TTV

<10um

BOW

<10um

WARP

<12um

Laser Marking

upon request

Suface Finish

P/E, P/P

Epi Ready

yes

Package

Single wafer container or cassette

Gallium Antimony Wafer Application

Gallium antimony wafer has the following applications:

– 2-4mm band optical device substrate
– Microwave device
– Laminated solar cell

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Gallium Antimony Wafer
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