Chemical Formula: ZrO2
Catalog Number: ST0206
CAS Number: 1314-23-4
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made
Indium Bonding and Elastomeric Target Bonding Service are available for Zirconium Oxide (ZrO2) Sputtering Target. Stanford Advanced Materials is devoted to machining standard backing plates and working together with the Taiwan Bonding Company for providing bonding services. For questions about target bonding materials, methods and services, please click here.
|Material Type||Zirconium Oxide|
|Melting Point (°C)||~2,700|
|heoretical Density (g/cc)||5.89|
|Type of Bond||Indium, Elastomer|
|Comments||Films oxygen deficient, clear and hard.|
Zirconium is a chemical element originated from the Persian ‘zargun’, meaning gold coloured. It was first mentioned in 1789 and observed by H. Klaproth. The isolation was later accomplished and announced by J. Berzelius. “Zr” is the canonical chemical symbol of zirconium. Its atomic number in the periodic table of elements is 40 with location at Period 5 and Group 4, belonging to the d-block. The relative atomic mass of zirconium is 91.224(2) Dalton, the number in the brackets indicating the uncertainty.
Oxygen is a chemical element originated from the Greek ‘oxy’ and ‘genes’ meaning acid-forming. It was first mentioned in 1771 and observed by W. Scheele. The isolation was later accomplished and announced by W. Scheele. “O” is the canonical chemical symbol of oxygen. Its atomic number in the periodic table of elements is 8 with location at Period 2 and Group 16, belonging to the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, the number in the brackets indicating the uncertainty.
Our Zirconium Oxide (ZrO2) Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
SAM specializes in producing high purity Zirconium Oxide (ZrO2) Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.