Catalog No. NB0070 Purity 99%, 99.999% CAS Number 12034-80-9 Chemical Formula NbSi2 Appearance Black powder Our high-quality niobium silicide powder is in submicron & nanoparticle forms. It is widely used in ceramic materials, electrode materials, thin film materials and refractory. Stanford Advanced Materials (SAM) provides high purity niobium silicide powder.Continue Reading
Catalog No. SC2276 Material Si Diameter Ø 4" / Ø 6" / Ø 8" Dopant Boron/Phosphorous/Antimony/Arsenic Conductivity P-type/N-type / Intrinsic Stanford Advanced Materials (SAM) provides silicon on insulator (SOI) wafer in diameter from 2" to 12". We always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer...Continue Reading
Catalog No. SC2275 Material SiO2/Si Diameter Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" Refractive Index 1.456 Stanford Advanced Materials (SAM) provides Silicon Thermal Oxide Wafer in diameter from 2" to 12". We always choose prime grade and a defect-free silicon wafer as the substrate for growing...Continue Reading
Catalog No. CY2175 Material SiC Thickness 330 um ~ 350 um Conductive Type N - type / Semi-insulating Diameter Ø 2" / Ø 3" / Ø 4" Polytype 4H / 6H Resistivity ( SI ) > 1E5 ohm-cm Stanford Advanced Materials (SAM) is a global manufacturer of Silicon Carbide Wafer. With our rich experience and knowledge...Continue Reading
Catalog No. IN2272 Material InP Thickness 350 um - 625 um Conductive Type N - type Diameter Ø 2" Ø 3" Ø 4" Stanford Advanced Materials (SAM) provides a wide range of compound wafers, including Indium Phosphide Wafer, Gallium Arsenide Wafer, Gallium Phosphide Wafer and Gallium Antimony Wafer.Continue Reading
Catalog No. GA2171 Material GaAs Thickness 350 um ~ 625 um Conductive Type P - type / N - type / Semi-insulating Diameter Ø 2" / Ø 3" / Ø 4" Polytype 4H / 6H Stanford Advanced Materials (SAM) offer single crystal GaAs gallium arsenide wafer produced by two main growth techniques LEC and VGF method,...Continue Reading
Catalog No. CY2536 Size 4" diameter x 0.5 mm Material Si-Ge（2 wt% Ge） Orientation <100> ±0.5° Growth Method Crystallization process Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used thanks to its excellent properties. Stanford Advanced Materials (SAM) has over two decades’ experience in the manufacture and sale of the Silicon-Germanium (Si-Ge) Single Crystal Substrates.Continue Reading
