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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

SC2275 Silicon Thermal Oxide Wafer

Catalog No. SC2275
Material SiO2/Si
Diameter Ø 2″ / Ø 3″ / Ø 4″ / Ø 6″ / Ø 8″ / Ø 12″
Refractive Index 1.456

Stanford Advanced Materials (SAM) provides Silicon Thermal Oxide Wafer in diameter from 2″ to 12″. We always choose prime grade and a defect-free silicon wafer as the substrate for growing high uniformity thermal oxide layer to meet your specific requirements.




Description

Silicon Thermal Oxide Wafer Description

The Silicon Thermal Oxide Wafer is the growth of an oxide layer (SiO2) on Silicon wafer, also name SiO2/Si wafer.  Thermal oxide is a kind of “grown” oxide layer, compared to CVD deposited oxide layer, it has a higher uniformity, and higher dielectric strength, it is an excellent dielectric layer as an insulator. In most silicon-based devices, the thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics.

Silicon Thermal Oxide Wafer Specifications

Oxidation technique

Wet oxidation or Dry oxidation

Diameter

Ø 2″ / Ø 3″ / Ø 4″ / Ø 6″ / Ø 8″ / Ø 12″

Oxide thickness

100 A ~ 6 um

Tolerance

+/- 5%

Surface

Single side or double sides oxide layer

Furnace

Horizontal tube furnace

Gase

Hydrogen and Oxygen gases

Temperature

900 °C – 1200 °C

Refractive index

1.456

Silicon Thermal Oxide Wafer Application

The Silicon Thermal Oxide Wafer is not only as a masking layer for ion implantation or thermal diffusion, and also a passivation layer that protects the surface of the device from the surrounding environment. It’s not just an electrically isolated insulation between the device and another device. It is also a major component of MOS processes and electrical isolation in multilayer metallization systems.

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Silicon Thermal Oxide Wafer
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