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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0966 Gallium (II) Sulphide Sputtering Target, GaS

Chemical Formula GaS
Catalog No.
CAS Number 12024-10-1
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

With a commitment to high purity and uniformity, the Gallium (II) Sulphide Sputtering Target ensures a dependable coating for advanced applications. Featuring unique optical properties, Gallium Sulphide excels in optics and electronics. Explore our platform offering a curated selection of top-quality sputtering targets, reflecting professionalism and excellence. Rely on our dedication to meet your specialized thin film technology needs, delivering reliability and precision in every application.

SKU: ST0966 Categories: , Tags: ,


Gallium (II) Sulphide Sputtering Target Description

Gallium (II) Sulfide Sputtering Target, also known as gallium monosulfide or GaS, is a specialized material used in the sputtering process for thin film deposition. In the sputtering technique, high-energy ions are directed at a target material, causing atoms to be ejected from the target surface. These ejected atoms then deposit onto a substrate, forming a thin film with specific properties.

Gallium Sulphide exhibits semiconducting properties, making it ideal for devices like photodiodes (LEDs). In optical applications, gallium Sulphide films showcase excellent optical transparency, serving in the creation of transparent conductive films and optical coatings. As a semiconductor material, gallium Sulphide boasts high electron mobility, contributing to enhanced performance in electronic devices.

Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium (II) Sulphide Sputtering Target

Gallium (II) Sulphide Sputtering Target Specifications

Compound Formula GaS
Molecular Weight 101.79
Appearance Yellow Target
Melting Point 965 °C
Density 3.86 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium (II) Sulphide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Gallium (II) Sulphide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Gallium (II) Sulphide Sputtering Target Application

  1. Thin Film Deposition: Gallium (II) Sulphide Sputtering Targets are commonly used in thin film deposition processes, where Gallium Sulphide is deposited onto a substrate by sputtering to form a uniform, controlled thin film. These films are used in the preparation of optical, electronic and magnetic films.
  2. Optoelectronics: Thin films prepared from Gallium Sulphide can be used in optoelectronic devices such as photodiodes (LEDs) and photovoltaic cells. Gallium Sulphide may be used as a semiconductor material in these devices.
  3. Optical applications: Thin films prepared from Gallium (II) Sulphide Sputtering Targets have a wide range of applications in optics. This includes the preparation of transparent conductive films, optical coatings and other optical components.
  4. Electronics: Gallium Sulfide may be used as a semiconductor material in electronic devices to support the preparation of electronic components, such as transistors.

Gallium (II) Sulphide Sputtering Target Packaging

Our Gallium (II) Sulphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Gallium (II) Sulphide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapour deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapour deposition (CVD), and physical vapour deposition (PVD) display and optical applications. Get an inquiry right now.