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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0884 Silicon (Si) Sputtering Targets, Undoped

Chemical Formula Si
Catalog No. ST0884
CAS Number 7440-21-3
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

The Silicon (Si) Sputtering Target is available in various forms, purities, sizes, and prices. Stanford Advanced Materials (SAM) offers high-quality Silicon (Si) Sputtering Targets at the most competitive prices.




Description

Silicon (Si) Sputtering Targets Description

Silicon (Si) Sputtering Target refers to a type of target material used in sputtering processes. Sputtering is a physical vapor deposition technique commonly used in the semiconductor industry to deposit thin films of materials onto a substrate.

Undoped Silicon (Si) Sputtering Targets are made of pure silicon without any intentional dopants or impurities. They provide a high-purity silicon source for deposition processes. These targets are typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.

Related Product: P-type Silicon Sputtering Target (P-doped Si)

Silicon (Si) Sputtering Targets Specifications

Dopant Undoped
Compound Formula Si
Molecular Weight 28.09
Appearance Dark Gray with a Bluish Tinge, Semi-Metallic
Melting Point 1410℃
Density 2.329 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Silicon (Si) Sputtering Targets Handling Notes

  1. Indium bonding is recommended for Silicon (Si) Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity, and is susceptible to thermal shock.

Silicon (Si) Sputtering Targets Application

Undoped Silicon (Si) Sputtering Target is typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

Silicon (Si) Sputtering Targets Packaging

Our Silicon (Si) Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.

Get Contact

SAM’s Silicon (Si) Sputtering Targets are available in various forms, purities, and sizes. We specialize in producing high purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.

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Silicon (Si) Sputtering Targets, Undoped
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