Catalog Number: ST0881
Chemical Formula: Ge/Sb/Te/C
High-quality Germanium Antimony Tellurium Doped Carbon C-GST Target can be bought at Stanford Advanced Materials (SAM). We also customize various shapes according to your requirements or drawings.
Germanium Antimony Tellurium Doped Carbon C-GST Target from Stanford Advanced Materials is an alloy sputtering material with the formula Ge/Sb/Te/C. Germanium Antimony Tellurium Doped Carbon C-GST Target has the ability to achieve fast and reversible conversion between its crystalline and amorphous states, making it one of the most important components of phase change memory devices. Compared with other phase change storage materials, germanium antimony tellurium has excellent thermal stability, high crystallization rate, and long durability, making it one of the widely used phase change storage materials. The doping of carbon in germanium, antimony, and tellurium improves the material’s thermoelectric performance and reduces the material’s RESET voltage.
Related Product: Germanium Telluride (GeTe) Sputtering Target, Bismuth Antimony Telluride (Bi/Sb/Te) Sputtering Target
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Germanium Antimony Tellurium Doped Carbon C-GST Target is used for phase change memory material.
Our Germanium Antimony Tellurium Doped Carbon C-GST Target is tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
High-quality Germanium Antimony Tellurium Doped Carbon C-GST Target is available in various forms, purities, sizes, and prices. We specialize in producing high purity thin film coating materials with the highest possible density and smallest possible average grain sizes. Please send us an inquiry for the current prices of the sputtering targets and other deposition materials that are not listed.