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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0967 Gallium Tellurium Sputtering Target, GaTe

Chemical Formula GaTe
Catalog No.
CAS Number 12024-14-5
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Committed to delivering high purity and uniformity, the Gallium Tellurium Sputtering Target guarantees a reliable coating for advanced applications. Explore our platform featuring a curated selection of premium sputtering targets, embodying professionalism and excellence. Count on our dedicated approach to fulfill your specific thin film technology requirements, ensuring reliability and precision in every application.

SKU: ST0967 Categories: , Tags: ,


Gallium Tellurium Sputtering Target Description

Gallium Tellurium Sputtering Target is a specialized material used in the sputtering process for thin film deposition. In sputtering, high-energy ions are directed at a target material, causing atoms to be ejected from the target surface. These ejected atoms then deposit onto a substrate, forming a thin film with specific properties. Gallium telluride is a semiconductor material with applications in optoelectronic devices and solar cells.

Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium-Tellurium Sputtering Target

Gallium Tellurium Sputtering Target Specifications

Compound Formula GaTe
Molecular Weight 197.32
Appearance Grey Target
Melting Point          824 °C
Density          5.44 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium Tellurium Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Gallium Tellurium Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Gallium Tellurium Sputtering Target Application

  1. Optoelectronic Devices: Thin films prepared from Gallium Tellurium may be used in optoelectronic devices such as photodiodes (LEDs) and other optical devices. Its semiconducting nature makes it suitable for the preparation of these electronic devices.
  2. Infrared Optical Devices: Gallium Tellurium is transparent in the infrared region and therefore may be useful in infrared optical devices. This includes applications such as infrared lenses and detectors.
  3. Thin Film Deposition: GaTe targets can be used in thin film deposition processes via sputtering techniques. In this way, Gallium Tellurium thin films can be formed on a substrate for the preparation of optical, electronic, and magnetic films.
  4. Semiconductor Devices: Since Gallium Tellurium is a semiconductor material, it may be used in the preparation of semiconductor devices such as transistors.

Gallium Tellurium Sputtering Target Packaging

Our Gallium Tellurium Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Gallium Tellurium Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.