(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0949 Tin Arsenide Sputtering Target, SnAs

Chemical Formula SnAs
Catalog No. ST0949
CAS Number 39332-13-3
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

With a wealth of expertise, Stanford Advanced Materials (SAM) stands out as a reliable provider of Tin Arsenide Sputtering Targets. Our offerings are distinguished by both high purity and competitive pricing, reflecting our commitment to quality and affordability.


Tin Arsenide Sputtering Target Description

Tin Arsenide Sputtering Targets, meticulously crafted by Stanford Advanced Materials (SAM), are derived from high-purity Tin Arsenide (SnAs) through precise processing, ensuring fine quality. These targets exhibit exceptional properties, making them suitable for deployment in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. The resulting thin films demonstrate excellent performance.

Tin Arsenide (SnAs) stands out as a semiconductor material, finding applications in the realm of electronics and semiconductor devices. With a direct energy gap, Tin Arsenide requires relatively small amounts of energy for electron and hole transitions, rendering it advantageous for select applications in optoelectronics.

Related Product: Tin Zinc Sputtering Target, Indium Tin Sputtering Target

Tin Arsenide Sputtering Target Specifications

Compound Formula SnAs
Molecular Weight 193.61
Appearance Silver Grey Target
Melting Point 579 °C
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Tin Arsenide Sputtering Target Handling Notes

  1. Indium bonding is recommended for Tin Arsenide Sputtering Targets, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Tin Arsenide Sputtering Target Application

Tin Arsenide Sputtering Targets find versatile applications in sputter deposition processes, particularly in the fabrication of semiconductor devices like thin film transistors (TFTs) and various integrated circuit components. Leveraging the semiconductor nature of Tin Arsenide (SnAs), these targets play a crucial role in crafting devices tailored for optoelectronic applications, including the production of photodetectors and lasers. The adaptability of Tin Arsenide Sputtering Targets underscores their significance in the realm of semiconductor technology and optoelectronics.

Tin Arsenide Sputtering Target Packaging

Our Tin Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Tin Arsenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.

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Tin Arsenide Sputtering Target, SnAs
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