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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0946 Gallium Arsenide Sputtering Target, GaAs

Chemical Formula GaAs
Catalog No. ST0946
CAS Number 1303-00-0
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Discover a diverse selection of Gallium Arsenide Sputtering Targets at Stanford Advanced Materials (SAM). Our sputtering targets are available in a variety of forms, purities, sizes, and competitive prices. Stanford Advanced Materials (SAM) is renowned for delivering sputtering targets with exceptional quality, providing you with options tailored to your specific requirements. Explore the possibilities with Stanford Advanced Materials (SAM)‘s Gallium Arsenide Sputtering Targets.


Gallium Arsenide Sputtering Target Description

Gallium Arsenide Sputtering Targets are employed in the production of Gallium Arsenide (GaAs) films through various thin film deposition methods such as electron beam evaporation and magnetron sputtering. GaAs exhibit semiconducting properties, making it highly valuable in electronics and optoelectronics.

With a direct energy gap, GaAs excel in optoelectronic applications, particularly in devices like photodetectors and lasers. Its high electron mobility is instrumental in high-frequency and microwave devices. Additionally, GaAs boasts relatively good thermal stability, enabling its operation in high-temperature environments.

Due to its semiconducting nature and direct energy gap, GaAs is well-suited for optoelectronics applications, including solar cells, photodetectors, and laser diodes. The high electron saturation drift rate of GaAs further enhances its performance in high-speed electronic devices.

Related Product: Zinc Oxide with Gallium Oxide Sputtering Target, Gallium (III) Telluride Sputtering Target

Gallium Arsenide Sputtering Target Specifications

Compound Formula GaAs
Molecular Weight 144.64
Appearance Grey Target
Melting Point 1238 °C
Density 5.3 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium Arsenide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Gallium Arsenide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Gallium Arsenide Sputtering Target Application

  1. Semiconductor device preparation: Gallium Arsenide Sputtering Targets are commonly used in sputtering deposition techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD).
  2. Microwave and RF devices: Gallium Arsenide Sputtering Targets are used in the preparation of microwave and RF devices, such as high electron mobility field effect transistors (HEMT). High electron mobility makes Gallium Arsenide (GaAs) in the field of high-frequency and millimeter-wave performance, suitable for communications equipment radar systems, and other applications.
  3. Magnetics research: Gallium Arsenide Sputtering Targets may also be used in magnetic materials research, especially in experiments and research areas related to magnetism.
  4. Semiconductor nanostructure preparation: Gallium Arsenide Sputtering Targets are also used in the preparation of semiconductor nanostructures, such as nanowires and nanodots, which are used in the research and development of new nanoelectronic devices.

Gallium Arsenide Sputtering Target Packaging

Our Gallium Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Gallium Arsenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.

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Gallium Arsenide Sputtering Target, GaAs
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