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(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0938 Copper (II) Telluride Sputtering Target, CuTe

Chemical Formula CuTe
Catalog No. ST0938
CAS Number 12019-23-7
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

The Copper (II) Telluride Sputtering Target is offered in diverse forms, purities, sizes, and price ranges. Stanford Advanced Materials (SAM) excels in supplying Copper (II) Telluride Sputtering Targets that combine the right price with high quality and purity, making it an excellent material for your production and research needs.


Copper (II) Telluride Sputtering Target Description

The Copper (II) Telluride Sputtering Targets with optimal density and minimal average grain size provided by Stanford Advanced Materials (SAM), apply specifically for usage in semiconductor, electronics, optics, and photonics fields. Copper (II) Telluride Sputtering Targets are specialized materials used in the sputtering process for the deposition of thin films. In sputtering, high-energy ions are used to dislodge atoms or molecules from a target material, and these particles then deposit onto a substrate, forming a thin film.

Copper (II) Telluride (CuTe) is a semiconductor material with electrical conductivity between that of a conductor and an insulator. At a certain temperature, the resistivity of Copper (II) Telluride (CuTe) decreases with increasing temperature.

Related Product: Copper Sputtering Target, Copper Oxide Sputtering Target

Copper (II) Telluride Sputtering Target Specifications

Compound Formula CuTe
Molecular Weight 191.15
Appearance Black Target
Melting Point 1125℃
Density 7.1 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Copper (II) Telluride Sputtering Target Handling Notes

  1. Indium bonding is recommended for Copper (II) Telluride Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Copper (II) Telluride Sputtering Target Application

Copper (II) Telluride Sputtering Targets have applications in electron beam evaporation coating and magnetron sputtering coating. These applications mainly take advantage of Copper (II) Telluride’s high purity, high density, high conductivity, and good crystalline properties. Its semiconductor nature also allows it to be put to use in related fields.

In addition, Copper (II) Telluride Sputtering Targets can also be used to prepare thin films, which are characterized by high transmittance, high reflectivity, and high conductivity, and therefore have potential applications in solar cells, optoelectronic devices, and other fields.

Copper (II) Telluride Sputtering Target Packaging

Our Copper (II) Telluride Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Copper (II) Telluride Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.

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Copper (II) Telluride Sputtering Target, CuTe
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