Chemical Formula: Zr
Catalog Number: ST0409
CAS Number: 7440-67-7
Thermal Conductivity: 22.7 W/m.K
Melting Point (°C): 1,852
Coefficient of Thermal Expansion: 5.7 x 10-6/K
Comparing with the planar target, rotatory target contains more material and offers a greater utilization, which means longer production runs and reduced downtime of the system, increases the throughput of the coating equipment. Besides, rotatory sputtering target allows the use of higher power densities due to the heat build-up being spread evenly over the surface area of the target. As a consequence, an increased deposition speed can be seen along with improved performance during reactive sputtering.
Zirconium is a chemical element originated from the Persian ‘zargun’, meaning gold coloured. It was first mentioned in 1789 and observed by H. Klaproth. The isolation was later accomplished and announced by J. Berzelius. “Zr” is the canonical chemical symbol of zirconium. Its atomic number in the periodic table of elements is 40 with location at Period 5 and Group 4, belonging to the d-block. The relative atomic mass of zirconium is 91.224(2) Dalton, the number in the brackets indicating the uncertainty.
Our Rotatory Zirconium (Zr) Sputtering Target are carefully handled to prevent damage during storage and transportation and to preserve the quality of our products in their original condition.
SAM specializes in producing high purity Rotatory Zirconium (Zr) Sputtering Target with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.