ST0496 Germanium Silicon (Ge/Si) Sputtering Target

Description of Germanium Silicon Sputtering Target

Germanium is a chemical element originated from Germany (with the Latin name Germania). Like silicon, germanium is a semiconductor and frequently utilized in the fabrication of transistors and integrated circuits. It is often evaporated under vacuum to create layers in the production of optical storage media and optical coatings. Other uses of the material are as an alloying agent and catalyst.

Silicon is a chemical element originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.

Related Products: Germanium sputtering target, Silicon sputtering target.

Specifications of Germanium Silicon Sputtering Target

We also offer other customized shapes and sizes of the sputtering targets, please send us an inquiry for more information.

Packing

Our Germanium Silicon sputtering targets are clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.

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SAM’s Germanium Silicon sputter targets are available in various forms, purities, sizes, and prices. We specialize in producing high purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.