ST0945 Cadmium Arsenide Sputtering Target, Cd3As2

Cadmium Arsenide Sputtering Target Description

Cadmium Arsenide Sputtering Targets are made of high-purity Cadmium Arsenide (Cd3As2), with a wide range of purity grades and morphology sizes to choose from under high-quality assurance, which can be applied to a variety of research and production needs. It can be used in chemical vapor deposition (CVD) and physical vapor deposition (PVD) to produce thin films, and under the quality assurance of the target, uniform and extremely thin film coverage can be obtained. Cadmium Arsenide (Cd3As2) itself has some unique properties that determine its unique application scenarios. Cadmium Arsenide (Cd3As2) exhibits semiconducting properties, which can be used in related semiconductor device fabrication. Cadmium Arsenide (Cd3As2) is considered to be a three-dimensional topological insulator, and its topological properties make it unique potential for applications in several topological insulators and topological insulator materials. In addition, in the field of magnetism, the crystal structure of Cadmium Arsenide (Cd3As2) may cause it to exhibit antimagnetic properties, which is of some importance in the study of magnetic materials and possible applications.

Related Product: Cadmium Sputtering Target, Cadmium Fluoride Sputtering Target

Cadmium Arsenide Sputtering Target Specifications

Cadmium Arsenide Sputtering Target Handling Notes

1. Indium bonding is recommended for Cadmium Arsenide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

Cadmium Arsenide Sputtering Target Application

1. Thin Film Deposition: Cadmium Arsenide Sputtering Targets can be employed in physical vapor deposition (PVD) or chemical vapor deposition (CVD), where sputter deposition is utilized. By placing Cadmium Arsenide Sputtering Targets in a vacuum chamber and using high-energy ions or electrons to bombard the target, thin films can be generated for the fabrication of semiconductor devices.
2. Semiconductor Device Fabrication: Thin films of Cadmium Arsenide (Cd3As2) can be used in the fabrication of semiconductor devices, including thin-film transistors, photodiodes, and other electronic and optoelectronic devices. Sputter-deposited films find applications in the semiconductor industry.
3. Magnetic Material Research: Due to the potential for Cadmium Arsenide (Cd3As2) to exhibit antiferromagnetic properties based on its crystal structure, sputter deposition of Cadmium Arsenide Sputtering Targets can be applied in the research and preparation of magnetic materials.

Cadmium Arsenide Sputtering Target Packaging

Our Cadmium Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Cadmium Arsenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.