(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0973 Germanium Antimony Selenium Tellurium Sputtering Target, GeSbSeTe

Chemical Formula GeSbSeTe
Catalog No. ST0973
CAS Number
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Germanium Antimony Selenium Tellurium Sputtering Targets offered by Stanford Advanced Materials (SAM) are celebrated for their unmatched purity and competitive pricing. Leveraging our profound expertise in materials science, we assure exceptional performance and reliability through the application of meticulous craftsmanship in target production.




Description

Germanium Antimony Selenium Tellurium Sputtering Target Description

Precision-engineered from top-tier materials, Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) Sputtering Targets provided by Stanford Advanced Materials (SAM) assure exceptional performance and reliability.

With a unique composition encompassing Germanium, Antimony, Selenium, and Tellurium, these targets exhibit outstanding electrical conductivity, a high melting point, and remarkable chemical stability. Additionally, their high refractive index makes them ideal for diverse optical applications. Backed by our commitment to excellence, trust that these targets will optimize your thin-film deposition processes to the fullest.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Antimony Selenium Tellurium Sputtering Target Specifications

Compound Formula GeSbSeTe
Appearance Silvery gray metallic Target
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Antimony Selenium Tellurium Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Germanium Antimony Selenium Tellurium Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Antimony Selenium Tellurium Sputtering Target Application

  1. Optical Storage Device Manufacturing: Due to the special electrical properties and excellent chemical stability, Germanium Antimony Selenium Tellurium Sputtering Targets are widely used in the manufacturing of optical storage devices, such as optical discs and phase change memories.
  2. Phase Change Memory: GeSbSeTe, as a key material for phase change memory, enables high-density, fast information storage and reading/writing in electronic devices.
  3. Optical Coatings: Due to their high refractive index, Germanium Antimony Selenium Tellurium Sputtering Targets are used in the preparation of optical coatings, and are particularly suitable for the manufacture of films with special optical properties.
  4. Semiconductor Industry: Germanium Antimony Selenium Tellurium Sputtering Targets also play an important role in semiconductor manufacturing, where they are used in thin film deposition processes to prepare high-performance films for use in electronic devices.

Germanium Antimony Selenium Tellurium Sputtering Target Packaging

Our Germanium Antimony Selenium Tellurium Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Germanium Antimony Selenium Tellurium Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.