(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0972 Germanium Phosphide Sputtering Target, GeP

Chemical Formula GeP
Catalog No. ST0972
CAS Number
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

With a commitment to excellence, Stanford Advanced Materials (SAM) presents Germanium Phosphide Sputtering Targets, renowned for their unparalleled purity and competitive pricing. Drawing upon our extensive expertise in materials science, we guarantee exceptional performance and reliability by employing meticulous craftsmanship in the production of our targets.


Germanium Phosphide Sputtering Target Description

Germanium Phosphide Sputtering Targets are crafted from the highest-grade materials, exemplifying unparalleled performance and reliability and positioning them as cutting-edge solutions for your thin-film deposition requirements.

Distinguished by their unique Germanium Phosphide composition, these targets boast a myriad of advantageous properties, rendering them well-suited for various applications. They demonstrate superb electrical conductivity, possess a high melting point, and exhibit exceptional chemical stability, making them particularly well-suited for deployment in microelectronics, solar cells, and other thin-film deposition processes that demand precise control over material properties.

Whether you are a research scientist or a manufacturing professional, our Germanium Phosphide Sputtering Targets ensure the quality and performance you seek. Underpinned by our unwavering commitment to excellence, you can trust that our targets will optimize your thin-film deposition processes to their utmost potential.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Phosphide Sputtering Target Specifications

Compound Formula GeP
Molecular Weight 103.61
Appearance Black Target
Melting Point 725 °C
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Phosphide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Germanium Phosphide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Phosphide Sputtering Target Application

  1. Microelectronic Manufacturing: Due to their excellent electrical properties, Germanium Phosphide Sputtering Targets are often used in microelectronic manufacturing. They play a key role in the preparation of semiconductor devices and support the production of high-performance electronic components.
  2. Photovoltaic Cells: These targets play a key role in the manufacture of photovoltaic cells. Their unique properties make them an important component of solar cells, helping to improve cell performance and efficiency.
  3. Thin Film Deposition: Germanium Phosphide Sputtering Targets are used in a wide variety of thin film deposition processes. Their excellent chemical stability and high melting point make them ideal for the preparation of high-quality films, especially where precise control of material properties is required.
  4. Optoelectronic Devices: Due to their unique electrical and chemical properties, these target substances are important in the manufacture of optoelectronic devices. Their use in devices such as lasers and photodiodes helps to improve the performance and reliability of the devices.

Germanium Phosphide Sputtering Target Packaging

Our Germanium Phosphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Germanium Phosphide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.