(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA
(949) 407-8904 Mon - Fri 08:00 - 17:00 23661 Birtcher Dr., Lake Forest, California, USA

ST0970 Germanium Disulphide Sputtering Target, GeS2

Chemical Formula GeS2
Catalog No. ST0970
CAS Number 12025-34-2
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Stanford Advanced Materials (SAM) boasts Germanium Disulphide Sputtering Targets with unparalleled purity and competitive pricing. Backed by our extensive experience in materials science, we deliver exceptional performance and reliability with our meticulously crafted targets.


Germanium Disulphide Sputtering Target Description

Stanford Advanced Materials (SAM) offers Germanium Disulphide Sputtering Targets, a high-quality material for thin-film deposition. Engineered with precision from the highest-grade materials, these targets deliver exceptional performance and dependability. Their unique Germanium and Disulphide composition offers a range of beneficial properties, including high electrical conductivity, a high melting point, and excellent chemical stability. Ideal for a variety of applications, such as microelectronics, solar cells, and other thin-film deposition processes requiring precise material control, SAM’s Germanium Disulphide Sputtering Targets meet the exacting standards of both research scientists and manufacturing professionals.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Disulphide Sputtering Target Specifications

Compound Formula GeS2
Molecular Weight 136.77
Appearance White Target
Melting Point 800 °C
Density 2.94 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Disulphide Sputtering Target Handling Notes

  1. Indium bonding is recommended for the Germanium Disulphide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Disulphide Sputtering Target Application

  1. Microelectronics: In the microelectronics industry, Germanium Disulphide Sputtering Targets are used in thin film deposition techniques such as sputter coating to fabricate electronic devices and integrated circuits. These devices typically require materials with high thermal and electrical conductivity to ensure performance and reliability.
  2. Solar Cells: Germanium Disulphide Sputtering Targets are used to prepare thin film solar cells. By precisely controlling the thickness and composition of the film, the photovoltaic conversion efficiency of solar cells can be improved.
  3. Sensors and Detectors: Germanium Disulphide Sputtering Targets have high photoconductive properties and can be used to make photoelectric sensors and detectors for detecting light, radiation and other signals.
  4. Optical devices: Germanium Disulphide Sputtering Targets can be used to manufacture optical films, such as transmittance enhancement films, reflective films and filters, to improve the performance of optical devices.
  5. Composites and Ceramics: Germanium Disulphide Sputtering Targets can be used with other materials to prepare composites and ceramic materials to achieve specific physical and chemical properties.

Germanium Disulphide Sputtering Target Packaging

Our Germanium Disulphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Germanium Disulphide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapour deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapour deposition (CVD), and physical vapour deposition (PVD) display and optical applications.